Abstract
Ti6Al4V is widely used as a metallic biomaterial and in cutting-edge fields of biomedicine that must comply with emerging technological demands such as smart wearable pieces and implantable electronic devices. In this work, we perform a duplex process where pure tantalum thin films were deposited over Ti6Al4V substrate by magnetron sputtering followed by a post-treatment consisting of plasma nitriding. Plasma nitrided Ta films exhibit improvement in wettability and increased roughness, both of which are attributed to the texturing of the surfaces. The RBS results plus SIMRA simulations allow to analyze the thin film stoichiometry and thickness variation according to the processes carried out. XRD spectra provided information of the nitrogen incorporation in tantalum, as a Ta containing phase was observed in plasma nitrided films. In summary, nitrogen-enriched tantalum films tailored by duplex process of sputtering/plasma nitriding fulfills important characteristics of quality coatings, synergistically.
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Acknowledgments
The authors are thankful to the following divisions at the University of Caxias do Sul: Graduate Program in Materials Science and Engineering (PPGMAT), the Biotechnology Institute (IB), and Microscopy Center (LCMic), and also the Ion Implantation Laboratory at the Institute of Physics (IF) at the Federal University of Rio Grande do Sul. CPF and AEDM are CAPES fellows. MMR, JSC, CAF, and CA are CNPq fellows. This study was financed in part by the Coordenação de Aperfeiçoamento de Pessoal de Nível Superior—Brasil (CAPES)—Finance Code—001, and INCT-INES (CNPq).
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This invited article is part of a special topical focus in the Journal of Materials Engineering and Performance on Surface Engineering. The issue was organized by Dr. M. K. Banerjee, Malaviya National Institute of Technology, Jaipur.
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Padilha Fontoura, C., Dotta Maddalozzo, A.E., Machado Rodrigues, M. et al. Nitrogen Incorporation into Ta Thin Films Deposited over Ti6Al4V: A Detailed Material and Surface Characterization. J. of Materi Eng and Perform 30, 4094–4102 (2021). https://doi.org/10.1007/s11665-021-05879-x
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DOI: https://doi.org/10.1007/s11665-021-05879-x