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Synthesis, Fabrication and Characterization of ZnO-Based Thin Films Prepared by Sol–Gel Process and H2 Gas Sensing Performance

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Abstract

In this paper, an attempt is made to deposit ZnO thin films using sol–gel process followed by dip-coating method on p-silicon (100) substrates for intended application as a hydrogen gas sensor owing to the low toxic nature and thermal stability of ZnO. The thin films are annealed under annealing temperatures of 350, 450 and 550 °C for 25 min. The crystalline quality of the fabricated thin films is then analyzed by field-emission scanning electron microscopy and transmission electron microscope. The gas sensing performance analysis of ZnO thin films is demonstrated at different annealing temperatures and hydrogen gas concentrations ranging from 100 to 3000 ppm. Results obtained show that the sensitivity is significantly improved as annealing temperature increases with maximum sensitivity being achieved at 550 °C annealing temperature and operating temperature of 150 °C. Hence, the modified ZnO thin films can be applicable as H2 gas sensing device showing to the improved performance in comparison with unmodified thin-film sensor.

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Acknowledgments

A. Dey thankfully acknowledges CSIR (SRF), Govt. of India (Ack. No. 143170/2K15/1), for providing financial support. The work is done in IC Design and Fabrication Centre, Jadavpur University, India. Authors would also like to thank Prof. K. K. Chattopadhyay (Director, School of Material Science and Nanotechnology, Jadavpur University, India) for FESEM and TEM facility.

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  1. Department of Electronics and Telecommunication Engineering, Jadavpur University, 188, Raja S. C. Mallick Road, Kolkata, 700032, India

    Anup Dey, Subhashis Roy & Subir Kumar Sarkar

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  1. Anup Dey
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  2. Subhashis Roy
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  3. Subir Kumar Sarkar
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Correspondence to Anup Dey.

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Dey, A., Roy, S. & Sarkar, S.K. Synthesis, Fabrication and Characterization of ZnO-Based Thin Films Prepared by Sol–Gel Process and H2 Gas Sensing Performance. J. of Materi Eng and Perform 27, 2701–2707 (2018). https://doi.org/10.1007/s11665-018-3284-z

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  • DOI: https://doi.org/10.1007/s11665-018-3284-z

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