Abstract
The role of composition on the resistivity and thermal stability of reactively sputtered Ta-Si-N films have been studied using x-ray diffraction, Rutherford backscattering spectrometry, and sheet resistance measurement. Films with higher silicon to tantalum ratio were found to be more thermally stable and have higher sheet resistance than films with lower Si to Ta ratio. While Ta0.28Si0.07N0.65 starts to crystallize at about 900°C, for example, Ta0.24Si0.10N0.66, and Ta0.24Si0.12N0.64 remained amorphous and thermally stable for heat treatment up to 1100°C. In-situ sheet resistance measurement showed that the resistivity of the alloys varies with composition and decreases with temperature; films with higher Ta/Si ratio have lower resistivity. The resistivity of the films, at 30°C, was about 675 Θ-cm, 285 Θ-cm, and 135 Θ-cm and decreased to 61.5 Θ-cm, 22.5 Θ-cm, and 19.5 Θ-cm at 480°C for Ta0.24Si0.12N0.64, Ta0.24Si0.10N0.66, and Ta0.28Si0.07N0.651 in that order. Our results indicate that the composition of Ta-Si-N films could be manipulated to obtain low resistivity films that could be used in device applications.
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References
M.J. Attardo and R. Rosenberg, J. Appl. Phys. 41, 2381 (1970).
L. Stolt and F.M. d’Heurle, Thin Solid Films 189, 269 (1990).
M.-A. Nicolet, Thin Solid Films 52, 415 (1978).
R.S. Nowicki and M.-A. Nicolet, Thin Solid Films 96, 317 (1982).
A. Wittmer, J. Vac. Sci. Technol. A, 2 (1984) 273.
J.O. Olowolafe, Ran Li, B. Blanpain, and J.W. Mayer, Appl. Phys. Lett. 57, 1307 (1990).
C.-K. Hu, S. Chang, M.B. Small, and J.E. Lewis, IEEE Proc. of 3rd Int. VLSI Multilevel Interconnect Conf. (Piscataway, NJ: IEEE, 1986), p. 181.
H.P. Kattelus and M.-A. Nicolet, Diffusion Phenomena in Thin Films and Microelectronic Materials, ed. D. Gupta and P.S. Ho (Park Ridge, NJ: Noyes Publications, 1989), p. 432.
J.O. Olowolafe, C.J. Mogab, R.B. Gregory, and A. Kottke, J. Appl. Phys. 72, 4099 (1992).
E. Kolawa, P.J. Pokela, J.S. Reid, R.P. Ruiz, and M.-A. Nicolet, IEEE Electron Device Lett. 12, 321 (1991).
E. Kolawa, P.J. Pokela, J.S. Reid, J.S. Chen, and M.-A. Nicolet, Appl. Surf. Sci. 53, 373 (1991).
P.J. Pokela, E. Kolawa, R. Ruiz, and M.-A. Nicolet, Thin Solid Films 203, 259 (1991).
P.J. Pokela, E. Kolawa, R. Ruiz, and M.-A. Nicolet, J. Electrochem. Soc. 138, 2125 (1991).
J.S. Reid, X. Sun, E. Kolawa, and M.-A. Nicolet, IEEE Electron Device Lett. 15, 298 (1994).
L.R. Doolittle, Nucl. Instrumen. Methods Phys. Res. B9, 344 (1985).
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Olowolafe, J.O., Rau, I., Unruh, K.M. et al. The effect of Ta to Si ratio on magnetron sputtered Ta-Si-N thin films. J. Electron. Mater. 28, 1399–1402 (1999). https://doi.org/10.1007/s11664-999-0129-4
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DOI: https://doi.org/10.1007/s11664-999-0129-4