Abstract
GaN layers have been grown by plasma-assisted molecular beam epitaxy on AlN-buffered Si(111) substrates. An initial Al coverage of the Si substrate of aproximately 3 nm lead to the best AlN layers in terms of x-ray diffraction data, with values of full-width at half-maximum down to 10 arcmin. A (2×2) surface reconstruction of the AlN layer can be observed when growing under stoichiometry conditions and for substrate temperatures up to 850°C. Atomic force microscopy reveals that an optimal roughness of 4.6 nm is obtained for AlN layers grown at 850°C. Optimization in the subsequent growth of the GaN determined that a reduced growth rate at the beginning of the growth favors the coalescence of the grains on the surface and improves the optical quality of the film. Following this procedure, an optimum x-ray full-width at half-maximum value of 8.5 arcmin for the GaN layer was obtained. Si-doped GaN layers were grown with doping concentrations up to 1.7×1019 cm−3 and mobilities approximately 100 cm2/V s. Secondary ion mass spectroscopy measurements of Be-doped GaN films indicate that Be is incorporated in the film covering more than two orders of magnitude by increasing the Be-cell temperature. Optical activation energy of Be acceptors between 90 and 100 meV was derived from photoluminescence experiments.
Similar content being viewed by others
References
S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto and H. Kiyoku, Appl. Phys. Lett. 69, 4056 (1996).
S. Tanaka, R.S. Kern and R.F. Davis, Appl. Phys. Lett. 66, 37 (1995).
B.N. Sverdlov, G.A. Martin, H. Morkoç and D.J. Smith, Appl. Phys. Lett. 67, 2063 (1995).
M.E. Lin, B. Sverdlov, G.L. Zhou and H. Morkoç, Appl. Phys. Lett. 62, 3479 (1993).
T. George, W.T. Spike, M.A. Khan, J.N. Kuznia and P. Chang-Chien, J. Electron Mater. 24, 241 (1995).
J.W. Yang, C.J. Sun, Q. Chen, M.Z. Anwar, M.A. Khan, S.A. Nikishin, G.A. Seryogin, A.V. Osinsky, L. Chernyak, H. Temkin, C. Hu and S. Mahajan, Appl. Phys. Lett. 69, 3566 (1996).
M.A. Sánchez-García, E. Calleja, E. Monroy, F.J. Sanchez, F. Calle, E. Muñoz and R. Beresford, J. Cryst. Growth 183, 23 (1998).
K.S. Stevens, M. Kinniburgh, A.F. Schwartzman, A. Ohtani and R. Beresford, Appl. Phys. Lett. 66, 3179 (1995).
J.N. Kuznia, M.A. Khan, D.T. Olson, R. Kaplan and J. Freitas, J. Appl. Phys. 73, 4700 (1993).
S. Yoshida, S. Misawa and S. Gonda, Appl. Phys. Lett. 42, 427 (1983).
M.A. Sánchez-García, E. Calleja, F. Calle, F.J. Sanchez, E. Monroy, J.M.G. Tijero, R. Beresford, A. Sanz-Hervas, C. Villar, J.J. Serrano and J.M. Blanco submitted to Semicond. Sci. Tecnol.
W.J. Meng and T.A. Perry, J. Appl. Phys. 76, 7824 (1994).
R. Beresford, A. Ohtani, K.S. Stevens and M. Kinniburgh, J. Vac. Sci. Tecnol. B 13, 792 (1995).
M.A. Sánchez-García, E. Calleja, E. Monroy, F.J. Sanchez, F. Calle, E. Muñoz, A. Sanz-Hervas, C. Villar and M. Aguilar, Mater. Res. Soc. Internet J. Nitride Semicond. Res. 2, 33 (1997).
E. Calleja, M.A. Sánchez-García, E. Monroy, F.J. Sanchez, E. Muñoz, A. Sanz-Hervas, C. Villar and M. Aguilar, J. Appl. Phys. 82, 4681 (1997).
K. Iwata, H. Asahi, S.J. Yu, K. Asami, H. Fujita, M. Fushida and S. Gonda, Jpn. J. Appl. Phys. 35, L289 (1996).
P. Hacke, G. Feuillet, H. Okumura and S. Yoshida, Appl. Phys. Lett. 69, 2507 (1996).
M. Godlewski, J.P. Bergman, B. Monemar, U. Rossner and A. Barski, Appl. Phys. Lett. 69, 2089 (1996).
F.J. Sanchez, F. Calle, E. Calleja, M.A. Sánchez-García, E. Muñoz, C.H. Molloy, D.J. Somerford, J.J. Serrano and J.M. Blanco, unpublished.
J.I. Pankove and J.A. Hutchby, J. Appl. Phys. 47, 5387 (1976).
M. Illegems and R. Dingle, J. Appl. Phys. 44, 4232 (1973).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Sánchez-García, M.A., Calleja, E., Sanchez, F.J. et al. Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy. J. Electron. Mater. 27, 276–281 (1998). https://doi.org/10.1007/s11664-998-0399-2
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-998-0399-2