Abstract
Etch selectivities for InN over GaN as high as 40 and 100 are achieved in BBr3/Ar and BI3/Ar, respectively, under inductively coupled plasma conditions. Previous work on Cl2-based plasma chemistries has produced selectivity in the reverse direction, i.e., GaN over InN, and therefore the introduction of these new Br2- and I2-based mixtures facilitates device fabrication involving double heterostructures of GaN/InxGa1−xN/GaN. Selectivities up to 10 for InN over the common mask materials SiO2 and SiNx were obtained in both BI3 and BBr3.
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Cho, H., Hong, J., Maeda, T. et al. High selectivity plasma etching of InN over GaN. J. Electron. Mater. 27, 915–917 (1998). https://doi.org/10.1007/s11664-998-0118-z
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DOI: https://doi.org/10.1007/s11664-998-0118-z