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Optimization of the structural properties of Hg1−x CdxTe (x = 0.18−0.30) alloys: Growth and modeling

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Abstract

The conditions for the metalorganic molecular beam epitaxial growth of Hg1−xCdxTe (x = 0.18−0.32) alloys at very low growth temperatures (T ≤150°C) have been optimized by correlating the surface properties and crystalline perfection with the incident Hg flux. A window for growth has been defined for x = 0.18, 0.23, and 0.32. A thermodynamic model has been developed to account for void formation. A neural net model has been used for the first time to model the dependence of void density on the Hg flux and the x-ray rocking curve widths on growth parameters. The combination of these two complementary modeling techniques allows for a flexible process optimization to be carried out with a minimum effort spent in calibration runs.

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Authors and Affiliations

  1. Advanced Materials Technology Division, Georgia Tech Research Institute, Georgia Institute of Technology, 30332-0850, Atlanta, GA

    A. Parikh, S. D. Pearson, R. N. Bicknell-Tassius, L. H. Zhang, R. Benz & C. J. Summers

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  1. A. Parikh
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  2. S. D. Pearson
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  3. R. N. Bicknell-Tassius
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  4. L. H. Zhang
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  5. R. Benz
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  6. C. J. Summers
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Parikh, A., Pearson, S.D., Bicknell-Tassius, R.N. et al. Optimization of the structural properties of Hg1−x CdxTe (x = 0.18−0.30) alloys: Growth and modeling. J. Electron. Mater. 26, 524–528 (1997). https://doi.org/10.1007/s11664-997-0188-3

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  • DOI: https://doi.org/10.1007/s11664-997-0188-3

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