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Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3

  • Topical Collection: 65th Electronic Materials Conference 2023
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Abstract

As gallium oxide-based heterojunction devices gain prominence, low-resistance contacts to aluminum gallium oxide material are of increasing importance for high performance and access to modulation doped layers. Here, the activation of ion-implanted silicon donors is investigated as a function of donor density from 5 × 1018 cm−3 to 1 × 1020 cm−3, activation anneal duration from 6 s to 600 s, and activation temperature from 900°C to 1140°C. Importantly, ohmic behavior was achievable across a reasonably wide process window at moderate to high doping concentrations. Specific contact resistance of 1 × 10−3 Ω cm2 and sheet resistance of 2.8 kΩ/□ were achieved for a 60 nm-deep 1 × 1020 cm−3 box implant after activation at 1000°C for 6 s with standard Ti/Au contacts. Under these conditions, an activation efficiency of 7% was observed with Hall mobility of ~32 cm2/Vs. Furthermore, we demonstrate a Schottky diode formed of implanted material with a rectification ratio > 106 and further confirm the Hall carrier density results using capacitance–voltage profiling analysis. Finally, we show the significant impact of anneal duration and the potential for deleterious over-annealing which reduces the active carrier density, mobility, and resultant material conductivity.

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U.S. Naval Research Laboratory.

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Authors and Affiliations

  1. U.S. Naval Research Laboratory, Washington, DC, 20375, USA

    Alan G. Jacobs, Joseph A. Spencer, Marko J. Tadjer, Boris N. Feigelson, Karl D. Hobart & Travis J. Anderson

  2. Virginia Tech, Blacksburg, VA, 24060, USA

    Joseph A. Spencer & Yuhao Zhang

  3. Smith College, Northampton, MA, 01063, USA

    Abbey Lamb

  4. University of Michigan, Ann Arbor, MI, 48109, USA

    Ming-Hsun Lee & Rebecca L. Peterson

  5. Agnitron Technology, Inc, Chanhassen, MN, 55317, USA

    Fikadu Alema & Andrei Osinsky

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  1. Alan G. Jacobs
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Correspondence to Alan G. Jacobs.

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Jacobs, A.G., Spencer, J.A., Tadjer, M.J. et al. Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3. J. Electron. Mater. 53, 2811–2816 (2024). https://doi.org/10.1007/s11664-024-11075-z

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