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Phase Changes of 4H-SiC in Excimer Laser Doping

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Abstract

To understand the mechanism of laser doping by a KrF excimer laser, we have experimentally evaluated the structural changes of 4H-SiC in the doping-capable region (the region where ablation does not occur and the temperature does not exceed the peritectic temperature). In the previous report, the calculation result assuming that the crystal state of SiC may change due to laser irradiation even in the doping-capable region was reported. In this study, it is experimentally confirmed that the phase change of 4H-SiC depends on the volume density of the total number of photons by laser irradiation even before ablation conditions. As a result, it was found that the model of the phase change of 4H-SiC in excimer laser doping can be considered as the synthesis of state change by photomechanical reaction in addition to photothermal and photochemical reactions.

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Acknowledgments

The authors would like to thank Mr. Masaharu Edo and Dr. Shinya Takashima of Fuji Electric Co., Ltd. for the discussion about data. This work was done for the Council for Science, Technology and Innovation (CSTI), Cross-ministerial Strategic Innovation Promotion Program (SIP), “Photonics and Quantum Technology for Society 5.0” (Funding agency, QST).

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Authors and Affiliations

  1. Academic Research and Industrial Collaboration Management Office of Kyushu University, 744 Motooka Nishi-ku, Fukuoka, Japan

    Yasutsugu Usami

  2. Research Division Gigaphoton Inc., 400 Yokokurashinden, Oyama-shi, Tochigi, Japan

    Yasutsugu Usami, Kaname Imokawa, Ryoichi Nohdomi & Hakaru Mizoguchi

  3. Purdue University, 610 Purdue Mall, West Lafayette, IN, 47907, USA

    Atsushi Sunahara

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  1. Yasutsugu Usami
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  2. Kaname Imokawa
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  3. Ryoichi Nohdomi
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  4. Atsushi Sunahara
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  5. Hakaru Mizoguchi
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Correspondence to Yasutsugu Usami.

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Usami, Y., Imokawa, K., Nohdomi, R. et al. Phase Changes of 4H-SiC in Excimer Laser Doping. J. Electron. Mater. 51, 3766–3772 (2022). https://doi.org/10.1007/s11664-022-09625-4

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  • DOI: https://doi.org/10.1007/s11664-022-09625-4

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