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Protrusion of Through-Silicon-Via (TSV) Copper with Double Annealing Processes

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Abstract

Copper filled through silicon via (TSV-Cu) is a crucial technology for chip stacking and three-dimensional (3D) vertical packaging. The multiple thermal loadings caused by the annealing process and deposition of interconnected dielectric layers lead to continuous TSV-Cu protrusions, which can affect its reliability severely. In this paper, the relationship between second protrusion height of TSV-Cu and its microstructur characteristics during double annealing is quantitatively investigated. It is found that grain size of TSV-Cu after annealing once is larger, and the second protrusion value under additional annealing can be greatly reduced. The reduction phenomenon of second protrusion is relative to the microstructure characteristics such as <111> texture and Σ3 grain boundary type. In addition, stress and strain are analyzed by finite element analysis (FEA) to reveal the reduction mechanisms of the second protrusion height of TSV-Cu during double annealing. The initial residual stress of fabricated TSV-Cu and its mechanical property parameters measured by nanoindentation test are incorporated in FEA. The main results show that additional thermal loading leads to a smaller increase of equivalent plastic strain (PEEQ) and von Mises stress if the TSV-Cu is annealed firstly at a high temperature of 400°C. This verifies the second protrusion tendency of TSV-Cu, and explains the reduction mechanisms of the second protrusion height of TSV-Cu.

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The data sets used or analyzed during the current study are available from the corresponding author on reasonable request.

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Acknowledgments

This work was funded by the National Natural Science Foundation of China (61804032, 11672009). The authors also would like to thank the convenience provided by HiSilicon Technologies CO., LIMITED during the study of this paper.

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Authors and Affiliations

  1. Institute of Electronics Packaging Technology and Reliability, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China

    Min Zhang, Fei Qin, Yanwei Dai, Pei Chen & Tong An

  2. Beijing Key Laboratory of Advanced Manufacturing Technology, Beijing University of Technology, Beijing, 100124, China

    Fei Qin, Yanwei Dai, Pei Chen & Tong An

  3. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, 510610, China

    Si Chen

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Contributions

ZM contributed to methodology, investigation, data curation, writing—original draft. FQ contributed to resources, conceptualization, supervision, writing—review and editing. SC contributed to resources, investigation. YWD contributed to methodology, investigation, writing—review and editing, supervision. CP contributed to investigation. TA contributed to writing—review and editing. All authors read and contributed to the manuscript.

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Correspondence to Fei Qin, Si Chen or Yanwei Dai.

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Zhang, M., Qin, F., Chen, S. et al. Protrusion of Through-Silicon-Via (TSV) Copper with Double Annealing Processes. J. Electron. Mater. 51, 2433–2449 (2022). https://doi.org/10.1007/s11664-022-09503-z

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