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Accurate Phase Change Behavior Characterization Of Ultrathin Sb-Rich Films Based On Superlattice-like Al/Ge10Sb90 System

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Abstract

Sb-rich films, such as Ge10Sb90, having ultra-fast phase change speed are promising chalcogenide materials for phase change memory (PCM) applications. However, it is difficult to accurately observe the phase change properties of ultrathin Sb-rich films due to their volatilization at higher temperatures. In this work, we establish a strategy to characterize ultrathin phase change behavior based specifically on Al/Ge10Sb90 superlattice-like (SLL) structures. It is confirmed that the Al layers, which can form a retardant layer without phase change behavior, can efficiently inhibit the volatilization of Ge10Sb90 films. In addition, the crystallization temperature can be modulated by varying the thickness ratio in SLL structures. In particular, the film of [Al(10nm)/Ge10Sb90(2nm)]5 is one of the promising candidates owing to their high crystallization temperature, good operating temperature for 10 years and excellent surface roughness.

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Acknowledgements

The work was supported by the National Natural Science Foundation of China (No. 22165007), Natural Science Foundation of Hainan Province (521RC505), and the Research Start-up Fund Project of Hainan University (RZ2100003123).

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Authors and Affiliations

  1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou, 213001, China

    Jianzhong Xue, Yongxing Sui, Xiaoqin Zhu, Jianhao Zhang & Weihua Wu

  2. School of Science, Hainan university, Haikou, 570228, China

    Hua Zou

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  1. Jianzhong Xue
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  2. Yongxing Sui
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  3. Xiaoqin Zhu
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  4. Jianhao Zhang
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  6. Hua Zou
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Correspondence to Jianhao Zhang or Hua Zou.

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Xue, J., Sui, Y., Zhu, X. et al. Accurate Phase Change Behavior Characterization Of Ultrathin Sb-Rich Films Based On Superlattice-like Al/Ge10Sb90 System. J. Electron. Mater. 51, 190–195 (2022). https://doi.org/10.1007/s11664-021-09271-2

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