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Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT

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Abstract

This paper analyzes the effect of a HfAlOx dielectric in a dual-channel (DC)single-gate (SG) metal oxide semiconductor high-electron-mobility transistor (DCSG-MOSHEMT) on improving device performance metrics. The small-signal analog/RF and noise performance of the device are explored in detail. The physics-based TCAD simulator tool is utilized to characterize the device. A peak drain current of 1.52 mA/µm is achieved due to superior sheet carrier density (ns) of 1.5×1018 cm−3 and low ON resistance. Further, a high positive threshold voltage (VT) of 0.214 V and a peak transconductance of 1.8 ms/µm is achieved with HfAlOx as the dielectric. Moreover, high cutoff frequency (fT) of 530 GHz and maximum frequency of oscillation (fmax) of 840 GHz at Vds = 0.5 V is achieved. The device exhibits a minimum noise figure of 1.32 dB at Vgs = 0.3 V and Vds = 0.5 V. With low noise over a large bandwidth and high-frequency performance, this device can be utilized to design low-noise amplifiers (LNA) for broadband applications.

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Authors and Affiliations

  1. Department of ECE, VSB Engineering College, Karur, Tamil Nadu, India

    R. Poornachandran

  2. Department of ECE, GITAM University, Bengaluru, Karnataka, India

    N. Mohankumar & M. Girish Shankar

  3. Department of ECE, Bannari Amman Institute of Technology, Sathyamangalam, Tamil Nadu, India

    R. Saravana Kumar

  4. Department of ECE, Arunai Engineering College, Tiruvannamalai, Tamil Nadu, India

    G. Sujatha

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  1. R. Poornachandran
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Poornachandran, R., Mohankumar, N., Saravana Kumar, R. et al. Influence of HfAlOx in DC, RF and Microwave Noise Performance of Dual-Channel Single-Gate InAs MOSHEMT. J. Electron. Mater. 50, 3569–3579 (2021). https://doi.org/10.1007/s11664-021-08845-4

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