Abstract
Mercaptoundecanoic acid capped-Ag nanoparticles (MUA-AgNPs) assembled on graphene oxide (GO), namely MUA-AgNPs-GO nanocomposite, was used for enhancing current–voltage (I–V) activity and stability of n-lnP based heterojunction devices. The structural, morphological and optical properties of the MUA-AgNPs-GO nanocomposite were examined by Raman spectroscopy, UV–Vis spectroscopy, transmission electron microscopy and scanning electron microscopy measurements. Besides, the Ag/MUA-AgNPs-GO/n-InP/Au-Ge heterojunction was fabricated, and working performance of the heterojunction was investigated in the temperature range of 80–320 K by steps of 20 K. The heterojunction created by the MUA-AgNPs-GO nanocomposite showed improved working performance such as better I–V characteristics, great stability and better rectifying ratio than that of our reference junction. The ideality factor and barrier height values of the junction formed with MUA-AgNPs-GO layer were found to be 1.07 eV and 0.630 eV, respectively. The experimental value of the Richardson constant was determined to be 3.82 A/cm2 K2 in the 80–160 K temperature range and to be 6.55 A/cm2 K2 in the 160–320 K temperature range. The results showed that the MUA-AgNPs-GO nanocomposite is a favorable candidate to provide modification of barrier height and to improve characteristic parameters for applications of the heterojunction devices.
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References
L.B. Freund and S. Suresh, Thin Film Materials (New York: Cambridge University Press, 2003).
A. Baltakesmez, A. Yenisoy, S. Tüzemen, and E. Gür, Mater. Sci. Semicond. Process. 74, 249 (2018).
S. Akın, E. Erol, and S. Sönmezoğlu, Electrochim. Acta 225, 243 (2017).
A. Kösemen, Z.A. Kösemen, B. Canimkubey, M. Erkovan, F. Başarır, S.E. San, O. örnek, and A.V. Tunç, Sol. Energy 132, 511 (2016).
G. Turgut and E. Sönmez, Superlattices Microstruct. 69, 175 (2014).
F.N. Dultsev, L.L. Vasilieva, S.M. Maroshina, and L.D. Pokrovsky, Thin Solid Films 510, 255 (2006).
H. Hirashima, I. Michihisa, and I. Yoshida, J. Non-Cryst. Solids 86, 327 (1986).
G.V. Baryshevsky, A.P. Ulyanenkov, and I.D. Feranchuk, Parametric X-ray Radiation in Crystals (New York: Springer Tracts in Modern Physics, 2005).
A.A.A. Darwish, S.A. Issa, T.A. Hamdalla, and M.M. El-Nahass, Opt. Quantum Electron. 49, 1 (2017).
M. Ali Yıldırım, S.T. Yıldırım, and A. Ates, J. Alloys Compd. 701, 37 (2017).
A. Reyhani, A. Gholizadeh, V. Vahedi, and M.R. Khanlary, Opt. Mater. 75, 236 (2018).
C. Claeys and E. Simoen, Radiation Effects in Advanced Semiconductor Materials and Devices (Berlin, Heidelberg, New York: Springer-Verlag, 2002).
E.Ö. Zayim and N.D. Baydogan, Energy Mater. Sol. Cells 90, 402 (2006).
A.M. Manzini, M.A. Alurralde, G. Gimenez, and V. Luca, J. Nucl. Mater. 482, 175 (2016).
N. Baydogan, Mater. Sci. Eng. 107, 70 (2004).
K.E. Sickafus, E.A. Kotomin, and B.P. Uberuaga, Radiation Effects in Solids (Italy: Proceedings of the NATO Advanced Study Institute on Radiation Effects in Solids Erice, 2004)
S. Sarangi, J. Phys. D: Appl. Phys. 49, 355 (2016).
X. Wang and Y. Zhang, Mater. Lett. 188, 257 (2017).
M. Oliveira, D. Ugarte, D. Zanchet, and A. Zarbin, J. Colloid Interf. Sci. 292, 429 (2005).
A. Jafarizad, A. Aghanejad, M. Sevim, Ö. Metin, J. Barar, Y. Omidi, and D. Ekinci, Chem. Sel. 2, 6663 (2017).
K.N. Kudin, B. Özbaş, H.C. Schniepp, R.K. Prudhomme, I.A. Aksay, and R. Car, Nano Lett. 8, 36 (2008).
J. Shen, Y. Hu, M. Shi, X. Lu, C. Qin, C. Li, and M. Ye, Chem. Mater. 21, 3514 (2009).
L. Tao, Y. Lou, Y. Zhao, M. Hao, Y. Yang, Y. Xiao, Y.H. Tsang, and J. Li, J. Mater. Sci. 53, 573 (2018).
Ö. Metin, H. Can, K. Şendil, and M.S. Gültekin, J. Colloid Interface Sci. 498, 378 (2017).
S.K. Cusshing, ACS Nano 8, 1002 (2014).
D. Hernandez-Sanchez, G. Villabona-Leal, I. Saucedo-Orozco, V. Bracamonte, E. Perez, C. Bittencourt, and M. Quintan, Phys. Chem. Chem. Phys. 20, 1685 (2018).
E.H. Rhoderick and R.H. Williams, Metal-Semiconductor Contacts (Oxford: University Press, 1988).
A.D. Bartolomeo, Phys. Rep. 606, 1 (2016).
A. Levstek and S. Amon, J. Appl. Phys. 94, 7604 (2003).
A. Behnam, E. Pop, G. Bosman, and A. Ural, J. Appl. Phys. 118, 114307 (2015).
H. Umezawa, S. Shikata, and T. Funaki, Jpn. J. Appl. Phys. 53, 570 (2014).
T. Çakıcı, B. Güzeldir, and M. Sağlam, J. Alloys Compd. 646, 954 (2015).
S.M. Sze, Physics of Semiconductor Device (New York: Wiley, 1981).
A. Tataroğlu, C. Ahmedova, G. Barim, A.G. Al-Sehemi, A. Karabulut, A.A. Al-Ghamdi, W.A. Farooq, and F. Yakuphanoglu, J. Mater. Sci. Mater. Electron. 15, 12561 (2018).
B. Guzeldir, M. Sağlam, and A. Ateş, J. Alloys Compd. 506, 388 (2010).
I. Taşçıoğlu, U. Aydemir, ş. Altındal, B. Kınacı, and S. Özçelik, J. Appl. Phys. 109, 054502 (2011).
A. Kocyigit, I. Orak, Z. Çaldıran, and A. Türüt, J. Mater. Sci. Mater. Electron. 28, 17177 (2017).
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Baltakesmez, A., Taşer, A., Kudaş, Z. et al. Barrier Height Modification of n-InP Using a Silver Nanoparticles Loaded Graphene Oxide as an Interlayer in a Wide Temperature Range. J. Electron. Mater. 48, 3169–3182 (2019). https://doi.org/10.1007/s11664-019-07088-8
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DOI: https://doi.org/10.1007/s11664-019-07088-8