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Determination of Low C Concentration in Czochralski-Grown Si for Solar Cell Applications by Liquid-N-Temperature Photoluminescence After Electron Irradiation

  • Topical Collection: 17th Conference on Defects (DRIP XVII)
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Abstract

The effectiveness of liquid-N-temperature photoluminescence (PL) after electron irradiation for quantification of low-level C has been demonstrated in Czochralski (CZ)-grown Si for solar cell applications. We focused on the intensity ratios of the C- and G-lines to the band-edge emission, which were used as indexes for determining the C concentration in the PL activation method at 4.2 K. Good correlations of the ratio between 4.2 K and 77 K were obtained for samples with similar P and O concentrations after electron irradiation at fluence varying from 1 × 1015 cm−2 to 10 × 1015 cm−2. We applied the present method to quantify the C concentration along the solidified fraction in CZ-Si ingots.

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Authors and Affiliations

  1. Meiji University, 1-1-1 Higashimita, Kawasaki, Kanagawa, 214-8571, Japan

    Michio Tajima, Hirotatsu Kiuchi, Fumito Higuchi, Yoichiro Ishikawa & Atsushi Ogura

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  1. Michio Tajima
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  2. Hirotatsu Kiuchi
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  3. Fumito Higuchi
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  4. Yoichiro Ishikawa
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  5. Atsushi Ogura
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Correspondence to Michio Tajima.

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Tajima, M., Kiuchi, H., Higuchi, F. et al. Determination of Low C Concentration in Czochralski-Grown Si for Solar Cell Applications by Liquid-N-Temperature Photoluminescence After Electron Irradiation. J. Electron. Mater. 47, 5056–5060 (2018). https://doi.org/10.1007/s11664-018-6324-4

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  • DOI: https://doi.org/10.1007/s11664-018-6324-4

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