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Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors

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Abstract

Atomic layer deposition (ALD) of Al2O3 on Ga-face GaN is studied with respect to the effects of growth saturation, precursor injection sequence, and H2O pretreatment. A metal–oxide–semiconductor capacitor (MOSCAP) structure is fabricated to measure the capacitance–voltage (C–V) characteristics. The origin of C–V hysteresis is explained by a model considering the different trapping behaviors of interface states and oxide border traps. The interface state density (D it) is extracted as a function of band bending using an ultraviolet (UV)-assisted method. It is found that H2O pretreatment followed by saturated ALD growth produces the best interface quality, with a reduced D it compared with growth without H2O pretreatment.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106-9560, USA

    Xiang Liu, Ramya Yeluri, Jing Lu & Umesh K. Mishra

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  1. Xiang Liu
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  2. Ramya Yeluri
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  3. Jing Lu
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  4. Umesh K. Mishra
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Correspondence to Xiang Liu.

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Liu, X., Yeluri, R., Lu, J. et al. Effects of H2O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al2O3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors. J. Electron. Mater. 42, 33–39 (2013). https://doi.org/10.1007/s11664-012-2246-8

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  • DOI: https://doi.org/10.1007/s11664-012-2246-8

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