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Effect of GaSb Addition on the Thermoelectric Properties of Mg2Si0.5Sn0.5 Solid Solutions

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Mg2Si0.5Sn0.5-xGaSb (0 ≤ x ≤ 0.15) solid solutions were synthesized by a B2O3 flux method followed by hot pressing. X-ray power diffraction analysis and scanning electron microscopy observations confirm that single-phase samples were obtained. The lattice constant monotonically increases with increasing GaSb content. It was found that the Seebeck coefficients showed weak temperature dependency after alloying with GaSb, being enhanced at high temperatures. The electrical conductivity increases while the lattice thermal conductivity decreases with increasing GaSb content. A maximum dimensionless figure of merit of 0.47 was obtained at 660 K for the sample with x = 0.08, mainly due to its high electrical conductivity.

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    Z. L. Du, G. Y. Jiang, Y. Chen, H. L. Gao, T. J. Zhu & X. B. Zhao

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  1. Z. L. Du
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  2. G. Y. Jiang
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  3. Y. Chen
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  4. H. L. Gao
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  5. T. J. Zhu
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  6. X. B. Zhao
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Correspondence to X. B. Zhao.

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Du, Z.L., Jiang, G.Y., Chen, Y. et al. Effect of GaSb Addition on the Thermoelectric Properties of Mg2Si0.5Sn0.5 Solid Solutions. J. Electron. Mater. 41, 1222–1226 (2012). https://doi.org/10.1007/s11664-011-1886-4

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  • DOI: https://doi.org/10.1007/s11664-011-1886-4

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