Abstract
An n-Mg0.2Zn0.8O/n-ZnO/SiO x (x < 2) heterostructure has been fabricated on n-Si by sputtering and electron-beam evaporation. The device showed nonrectifying behavior, and emitted strong white light under reverse bias with positive voltages applied to n-Si. The white-light electroluminescence (EL) is believed to result from electron–hole recombination at defect levels of ZnO. The EL mechanism has been tentatively explained in terms of the energy band structure of the device under forward and reverse bias.
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Acknowledgements
The authors would like to acknowledge financial support from the Natural Science Foundation of China (No. 60906024), the China Postdoctoral Science Foundation-funded Project No. 20080441223, the “973 Program” (No. 2007CB613403), and foundation 2008DFR50250 of MOST.
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Chen, P., Ma, X., Zhang, Y. et al. Defect-Related White-Light Emission from ZnO in an n-Mg0.2Zn0.8O/n-ZnO/SiO x Heterostructure on n-Si. J. Electron. Mater. 39, 652–655 (2010). https://doi.org/10.1007/s11664-010-1173-9
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DOI: https://doi.org/10.1007/s11664-010-1173-9