We have achieved metalorganic vapor-phase epitaxial growth of (211)B CdTe on Si without the requirement of a pregrowth high-temperature oxide desorption step. This was achieved by growing a thin Ge film on the starting (211) Si substrates. To get (211)B CdTe orientation, the Ge surface was exposed to As prior to the start of CdTe growth. A thin ZnTe interlayer between Ge and CdTe has been shown to improve the CdTe surface morphology.
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Acknowledgements
This work was partially supported by US Army STTR contract W911NF-07-C-0105 through Agiltron Inc. (Dr. Matthew Erdtmann) and US ARMY Phase I STTR contract W911NF-07-C-0085 through Brimrose Corp. (Late Dr. G. V. Jagannathan). Many discussions with Dr. Randy Jacobs of US Army NVESD and Dr. P. Wijewarnasuriya of ARL are also appreciated.
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Rao, S., Shintri, S. & Bhat, I. Metalorganic Vapor-Phase Epitaxial Growth of (211)B CdTe on (211) Si Using Ge Interfacial Layer. J. Electron. Mater. 38, 1618–1623 (2009). https://doi.org/10.1007/s11664-009-0719-1
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DOI: https://doi.org/10.1007/s11664-009-0719-1