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Quantum Confinement and Carrier Localization Effects in ZnO/Mg x Zn1−x O Wells Synthesized by Pulsed Laser Deposition

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The optical properties of ZnO/Mg x Zn1−x O (x = 0.17) quantum wells (QWs) grown on c-plane sapphire substrates by pulsed laser deposition are presented. A blueshift in the low-temperature photoluminescence (PL) of the QWs illustrates quantum confinement effects as a function of ZnO well widths in the range from 3 nm to 10 nm. Enhanced luminescence properties are observed with increasing quantum confinement. PL data indicate weak polarization effects associated with the heterojunctions. Temperature-dependent PL measurements indicate carrier/exciton localization with activation energy of approximately 4−5 meV, which are attributed to potential fluctuations at the well-barrier interface.

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Acknowledgements

This work was supported by AFOSR under Contract Number FA9550-04-1-0390 and the Center for Optoelectronic Nanostructured Semiconductor Technologies, a DARPA UPR award HR0011-04-1-0040. One of the authors, Willie Bowen, would like to acknowledge support by the ONR/HBEC Future Engineering Faculty Fellowship Program.

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  1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI, 48109-2122, USA

    W.E. Bowen, W. Wang, E. Cagin & J.D. Phillips

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  1. W.E. Bowen
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  2. W. Wang
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  3. E. Cagin
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  4. J.D. Phillips
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Correspondence to W.E. Bowen.

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Bowen, W., Wang, W., Cagin, E. et al. Quantum Confinement and Carrier Localization Effects in ZnO/Mg x Zn1−x O Wells Synthesized by Pulsed Laser Deposition. J. Electron. Mater. 37, 749–754 (2008). https://doi.org/10.1007/s11664-007-0299-x

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  • DOI: https://doi.org/10.1007/s11664-007-0299-x

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