Abstract
High-temperature processing was applied to SiC boron-doped epitaxial layers, epitaxial layers grown on boron-rich substrates, and boron-implanted samples in order to establish conditions favorable for the formation of boron-related centers (D-centers) that introduce a deep level in SiC bandgap. Photoluminescence (PL) was used to detect and compare the formation of the D-center after different processing steps. It was confirmed that the presence of lattice defects was required for achieving significant boron diffusion and D-center formation. In addition, epitaxial growth on the top of a boron-implanted sample yielded efficient boron in-diffusion in the growing layer, which resulted in a material compensated with D-centers. The temperature dependence of the D-center formation efficiency was investigated.
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Das, H., Koshka, Y., Mazzola, M.S. et al. Effect of high-temperature processing on the creation of boron-related deep levels in 4H-SiC. J. Electron. Mater. 35, 625–629 (2006). https://doi.org/10.1007/s11664-006-0110-4
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DOI: https://doi.org/10.1007/s11664-006-0110-4