Abstract
Energy-filtered transmission electron microscopy (EFTEM) was used to study 6H-SiC/SiO2 interfaces produced by thermal oxidation as a function of the oxidation conditions. Elemental maps of C and Si were used to calculate C-to-Si concentration profiles across the interfaces. Enhanced C/Si concentrations (up to ∼ 35%) were observed at distinct regions in samples oxidized at 1100°C for 4 h in a wet ambient. The data from a number of randomly selected regions indicate that re-oxidation at 950°C for 3 h significantly reduced, but did not eliminate, the amount of excess interfacial carbon.
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Chang, K.C., Bentley, J. & Porter, L.M. Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy. J. Electron. Mater. 32, 464–469 (2003). https://doi.org/10.1007/s11664-003-0179-y
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DOI: https://doi.org/10.1007/s11664-003-0179-y