Abstract
The SiC wafers implanted with Al were capped with AlN, C, or AlN and C and were annealed at temperatures as high as 1700°C to examine their ability to act as annealing caps. As shown previously, the AlN film was effective up to 1600°C, as it protected the SiC surface, did not react with it, and could be removed selectively by a KOH etch. However, it evaporated too rapidly at the higher temperatures. Although the C did not evaporate, it was not a more effective cap because it did not prevent the out-diffusion of Si and crystallized at 1700°C. The crystalline film had to be ion milled off, as it could not be removed in a plasma asher, as the C films annealed at the lower temperatures were. A combined AlN/C cap also was not an effective cap for the 1700°C anneal as the N or Al vapor blew holes in it, and the SiC surface was rougher after the dual cap was removed than it was after annealing at the lower temperatures.
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Jones, K.A., Derenge, M.A., Shah, P.B. et al. A comparison of graphite and AlN caps used for annealing ion-implanted SiC. J. Electron. Mater. 31, 568–575 (2002). https://doi.org/10.1007/s11664-002-0127-2
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DOI: https://doi.org/10.1007/s11664-002-0127-2