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Optical, magnetic, and photoelectrochemical properties of electrochemically deposited Eu3+-doped ZnSe thin films

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Abstract

The various mole percent (1–5%) of Eu3+-doped ZnSe thin films were fabricated on the indium-doped tin oxide (ITO) conducting glass substrate by single-step electrochemical deposition (ECD) process in an aqueous medium at 50 °C. The structural, optical, magnetic, and electrochemical properties were characterized as a function of the Eu3+ ion concentration. The X-ray diffraction (XRD) analyses evidenced that the films were hexagonal wurtzite structure along with the (101) preferential orientation. High-resolution scanning electron microscopy (HRSEM) results revealed that the thin films show a spherical like structure for 1–3% of Eu3+-doped ZnSe films. Further, increasing of Eu3+ concentration (4 and 5%), the surface morphology of thin films was observed as agglomerated grain-like structure. The band gap energy of Eu3+-doped ZnSe thin films (2.35 to 2.49 eV) determined by UV-Vis spectra showed a blue shift of absorption edge compared to the pure ZnSe thin film (2.33 eV). The increased band gap by doping of Eu3+ is due to the quantum size effect. The PL emission intensity enhanced by increasing Eu3+ concentration which revealed the enhanced radiative recombination in the luminescence process. The magnetic study revealed that Eu3+-doped ZnSe thin films were ferromagnetic in nature. Electrochemical impedance analysis indicated that 4% of Eu3+-doped ZnSe thin films showed a lower charge transfer resistance (352 Ω) and excellent properties compared to the other samples. Further, the photoelectrochemical measurements carried out for the optimized 4% Eu3+-doped ZnSe thin film revealed the faster migration of photoinduced charge carriers. The present investigation demonstrates that the electrochemically deposited Eu3+-doped ZnSe thin film is a promising candidate for electrochemical device applications.

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Acknowledgments

P.P. would like to acknowledge the financial support of Science and Engineering Research Board (SERB), Department of Science and Technology (DST), Fast Track Research Scheme, India.

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Authors and Affiliations

  1. Materials Chemistry Lab, Department of Chemistry, Muthurangam Government Arts College, Vellore, 632002, India

    T. Rajesh Kumar & P. Prabukanthan

  2. Department of Polymer Science, University of Madras, Guindy Campus, Chennai, 600025, India

    G. Harichandran

  3. Solar Energy Lab, Department of Chemistry, Thiruvalluvar University, Vellore, 632115, India

    J. Theerthagiri & J. Madhavan

  4. Center of Excellence in Environmental Studies (CEES), King Abdulaziz University, Jeddah, 21589, Saudi Arabia

    Sivaraman Chandrasekaran

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  1. T. Rajesh Kumar
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  2. P. Prabukanthan
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  3. G. Harichandran
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  4. J. Theerthagiri
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  5. Sivaraman Chandrasekaran
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  6. J. Madhavan
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Correspondence to P. Prabukanthan.

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Rajesh Kumar, T., Prabukanthan, P., Harichandran, G. et al. Optical, magnetic, and photoelectrochemical properties of electrochemically deposited Eu3+-doped ZnSe thin films. Ionics 23, 2497–2507 (2017). https://doi.org/10.1007/s11581-017-2090-1

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  • DOI: https://doi.org/10.1007/s11581-017-2090-1

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