Skip to main content
SpringerLink
Log in

Two-dimensional subthreshold current model for dual-material gate SOI nMOSFETs with single halo

  • Research Article
  • Published:
Frontiers of Electrical and Electronic Engineering in China

Abstract

A two-dimensional (2D) model for the subthreshold current in the dual-material gate (DMG) silicon-on- insulator (SOI) MOSFET with a single halo is presented. The model considers single halo doping in the channel near the source and a dual-material gate to derive the channel potential using the explicit solution of the 2D Poisson’s equation. Together with the conventional drift-diffusion theory, this results in the development of a subthreshold current model for the novel structure. Model verification is carried out using the 2D device simulator ISE. Excellent agreement is obtained between the calculations and the simulated results of the model.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Saxena M, Haldar S, Gupta M, Gupta R S. Design considerations for novel device architecture: hetero-material double-gate (HEM-DG) MOSFET with sub-100nm gate length. Solid-State Electronics, 2004, 48(7): 1169–1174

    Article  Google Scholar 

  2. Long W, Ou H, Kuo J M, Chin K K. Dual-material gate (DMG) field effect transistor. IEEE Transactions on Electron Devices, 1999, 46(5): 865–870

    Article  Google Scholar 

  3. Young K K. Short-channel effect in fully depleted SOI MOSFETs. IEEE Transactions on Electron Devices, 1989, 36(2): 399–402

    Article  Google Scholar 

  4. Zhou X. Exploring the novel characteristics of hetero-material gate field-effect transistors (HMGFETs) with gate-material engineering. IEEE Transactions on Electron Devices, 2000, 47(1): 113–120

    Article  Google Scholar 

  5. Hori A, Segawa M, Shimomura H, Kameyama S. A self-aligned pocket implantation (SPI) technology for 0.2-μm dual-gate CMOS. IEEE Electron Device Letters, 1992, 13(4): 174–176

    Article  Google Scholar 

  6. Hori A, Hiroki A, Nakaoka H, Segawa M, Hori T. Quarter-micrometer SPI (self-aligned pocket implantation) MOSFET’s and its application for low supply voltage operation. IEEE Transactions on Electron Devices, 1995, 42(1): 78–86

    Article  Google Scholar 

  7. Shin H, Lee S. A 0.1 μm asymmetric halo by large-angle-tilt implant (AHLATI) MOSFET for high performance and reliability. IEEE Transactions on Electron Devices, 1999, 46(4): 820–822

    Article  MathSciNet  Google Scholar 

  8. Najeeb-ud-din, Dunga M V, Kumar A, Vasi J, Ramgopal Rao V, Cheng B, Woo J C S. Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique. IEEE Electron Device Letters, 2002, 23(4): 209–211

    Article  Google Scholar 

  9. Reddy G V, Kumar M J. Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study. Microelectronics Journal, 2004, 35(9): 761–765

    Article  Google Scholar 

  10. Kumar M J, Chaudhry A. Two-dimensional analytical modeling of fully depleted DMG SOI MOSFET and evidence for diminished SCEs. IEEE Transactions on Electron Devices, 2004, 51(4): 569–574

    Article  Google Scholar 

  11. Li Z C, Jiang Y L, Wu J M. Dual material gate SOI MOSFET with a single halo. Chinese Journal of Semiconductors, 2007, 28(3): 327–331

    MathSciNet  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. School of Microelectronics, Xidian University, Xi’an, 710071, China

    Suzhen Luan, Hongxia Liu, Renxu Jia & Jin Wang

Authors
  1. Suzhen Luan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Hongxia Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Renxu Jia
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Jin Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Suzhen Luan.

Additional information

__________

Translated from Chinese Journal of Semiconductors, 2008, 29(4): 746–750 [译自 : 半导体学报]

About this article

Cite this article

Luan, S., Liu, H., Jia, R. et al. Two-dimensional subthreshold current model for dual-material gate SOI nMOSFETs with single halo. Front. Electr. Electron. Eng. China 4, 98–103 (2009). https://doi.org/10.1007/s11460-009-0008-z

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11460-009-0008-z

Keywords

Search

Navigation