Conclusion
The direct current and radio frequency of DCGC-HEMT and DCTB-HEMT were systematically investigated. Owing to the utilization of a graded-AlGaN bottom barrier to provide more carriers and shield traps in the buffer, DCGC-HEMT exhibited greater saturated drain current and suppression in drain lag, enabling it to show greater output performance than DCTB-HEMT. The improvement in the former’s superior large-signal characteristic indicates its potential for high-performance RF PA applications.
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Acknowledgements
This work was supported by National Natural Science Foundation of China (Grant Nos. 62234009, 62090014, 62188102, 62104178, 62104179, 62104184), China Postdoctoral Science Foundation (Grant No. 2022T150505), Postdoctoral Fellowship Program of CPSF (Grant No. GZB20230557), Natural Science Basic Research Program of Shaanxi (Grant No. 2024JC-YBQN-0611), and Fundamental Research Funds for the Central Universities of China (Grant No. YJSJ23019).
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Shi, C., Yang, L., Zhang, M. et al. Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. Sci. China Inf. Sci. 67, 149401 (2024). https://doi.org/10.1007/s11432-023-3940-x
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DOI: https://doi.org/10.1007/s11432-023-3940-x