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Memristive neuron model with an adapting synapse and its hardware experiments

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Abstract

Electromagnetic induction effect caused by neuron potential can be mimicked using memristor. This paper considers a flux-controlled memristor to imitate the electromagnetic induction effect of adapting feedback synapse and presents a memristive neuron model with the adapting synapse. The memristive neuron model is three-dimensional and non-autonomous. It has the time-varying equilibria with multiple stabilities, which results in the global coexistence of multiple firing patterns. Multiple numerical plots are executed to uncover diverse coexisting firing patterns in the memristive neuron model. Particularly, a nonlinear fitting scheme is raised and a fitting activation function circuit is employed to implement the memristive mono-neuron model. Diverse coexisting firing patterns are observed from the hardware experiment circuit and the measured results verify the numerical simulations well.

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Author information

Authors and Affiliations

  1. School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, China

    BoCheng Bao, YongXin Zhu, Han Bao, HuaGan Wu & Mo Chen

  2. Department of Physics, Lanzhou University of Technology, Lanzhou, 730050, China

    Jun Ma

Authors
  1. BoCheng Bao
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  2. YongXin Zhu
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  3. Jun Ma
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  4. Han Bao
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  5. HuaGan Wu
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  6. Mo Chen
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Corresponding author

Correspondence to Mo Chen.

Additional information

This work was supported by the National Natural Science Foundation of China (Grant Nos. 51777016 and 61801054), and the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20191451).

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Bao, B., Zhu, Y., Ma, J. et al. Memristive neuron model with an adapting synapse and its hardware experiments. Sci. China Technol. Sci. 64, 1107–1117 (2021). https://doi.org/10.1007/s11431-020-1730-0

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  • DOI: https://doi.org/10.1007/s11431-020-1730-0

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