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Dipole antennas based on SI-GaAs:Cr for generation and detection of terahertz radiation

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Russian Physics Journal Aims and scope

Design and technology of fabrication of dipole terahertz radiation emitters and detectors based on semiinsulating GaAs compensated with chromium and having the nonequilibrium charge carrier lifetime of the order of 100 ns are described. Generation and detection of subterahertz radiation in dipole antennas excited by femtosecond laser pulses are experimentally investigated depending on the topology of contact electrodes and the parameters of the active medium.

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Authors and Affiliations

  1. Siberian Physical-Technical Institute at National Research Tomsk State University, Tomsk, Russia

    S. Yu. Sarkisov, F. D. Safiullin, M. S. Skakunov, O. P. Tolbanov & A. V. Tyazhev

  2. Institute on Laser and Information Technologies of the Russian Academy of Sciences, Shatura, Moscow Region, Russia

    M. M. Nazarov

  3. Moscow State University, Moscow, Russia

    and A. P. Shkurinov

Authors
  1. S. Yu. Sarkisov
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  2. F. D. Safiullin
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  3. M. S. Skakunov
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  4. O. P. Tolbanov
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  5. A. V. Tyazhev
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  6. M. M. Nazarov
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  7. and A. P. Shkurinov
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Corresponding author

Correspondence to S. Yu. Sarkisov.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 31–39, August, 2012.

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Sarkisov, S.Y., Safiullin, F.D., Skakunov, M.S. et al. Dipole antennas based on SI-GaAs:Cr for generation and detection of terahertz radiation. Russ Phys J 55, 890–898 (2013). https://doi.org/10.1007/s11182-013-9897-7

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  • DOI: https://doi.org/10.1007/s11182-013-9897-7

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