Skip to main content
SpringerLink
Log in

Short-circuited double Langmuir probe as a model of a conducting wafer under plasma processing

  • Materials and Microstructure Characterization
  • Published:
Russian Microelectronics Aims and scope Submit manuscript

Abstract

The electromagnetic interaction is considered between a conducting wafer and a gas-discharge plasma under both dc and ac conditions, with emphasis on the collection of discharge current by the wafer. The mechanism is described whereby a silicon wafer behaves like an asymmetrical short-circuited double Langmuir probe. This model provides an understanding of how plasmas act on conducting parts of fabrication equipment.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

REFERENCES

  1. P.P. Kulik B.P. Kovalev V.A. Riaby et al. (1984) Neideal’naya plazma Energoatomizdat Moscow

    Google Scholar 

  2. Riaby, V.A., Savinov, V.P., Sporykhin, A.A., et al., USSR Inventor’s Certificate no. 1429842, 1986.

  3. Riaby, V.A., Sporykhin, A.A., Vorob’ev, V.V., et al., Obz. Inf. Elektrotekh. Prom—sti SSSR, Ser. 05, 1987, issue 3 (13), pp. 11–13.

  4. N.A. Iermolova V.A. Riaby V.P. Savinov et al. (1991) Physical Aspects of Dry Plasma-Chemical Etching of Photoresist in Barrel Reactors Contributed Papers of the 20th Int. Conf. on Phenomena in Ionized Gases Felici Editore Pisa 325–326

    Google Scholar 

  5. A.F. Aleksandrov V.A. Riaby V.P. Savinov (1999) Electrical Interaction of Silicon Wafers and Gas-Discharge Plasmas Tezisy dokladov XXVI Zvenigorodskoi konferentsii po fizike plazmy i UTS Zvenigorod Moscow oblast, Russia 269

    Google Scholar 

  6. F. Chen (1984) Introduction to Plasma Physics and Controlled Fusion Plasma Physics Plenum New York

    Google Scholar 

  7. M.D. Gill (1984) ArticleTitleSustaining Mechanisms in RF Plasmas Vacuum 34 IssueID3–4 357–364

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Moscow State University, Moscow, Russia

    A. F. Aleksandrov, V. A. Riaby, V. P. Savinov & V. G. Yakunin

Authors
  1. A. F. Aleksandrov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. A. Riaby
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. P. Savinov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. V. G. Yakunin
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Translated from Mikroelektronika, Vol. 34, No. 1, 2005, pp. 21–26.

Original Russian Text Copyright © 2005 by Aleksandrov, Riaby, Savinov, Yakunin.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Aleksandrov, A.F., Riaby, V.A., Savinov, V.P. et al. Short-circuited double Langmuir probe as a model of a conducting wafer under plasma processing. Russ Microelectron 34, 18–21 (2005). https://doi.org/10.1007/s11180-005-0002-y

Download citation

  • Received:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11180-005-0002-y

Keywords

Search

Navigation