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Preparation and Characterization of Sulfurized Tungsten Doped Non-hydrogenated Diamond-Like Carbon Films

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Abstract

A tungsten doped non-hydrogenated diamond-like carbon (W-DLC) film was prepared by ion beam assisted deposition, and then W-DLC film was sulfurized by low temperature ion sulfurization. The structural analyses were performed on the scanning electron microscope, optical profilometer, Raman spectroscope and transmission electron microscope equipped with energy dispersive spectroscope. The results showed that the low temperature ion sulfurization treatment increase ID/IG ratio from 3.5 to 4.0 and 3.4 to 3.8 for sulfurized DLC and W-DLC films, respectively. The microstructures of sulfurized DLC film changed from amorphous to nanocrystalline/amorphous structure after low temperature ion sulfuration. The sulfurized W-DLC film was composed of nanocrystallites β-WC1−X, WS2 and FeS, which uniformly dispersed in the amorphous DLC matrix.

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Acknowledgments

The authors are grateful to the financial supports by the National Natural Science Foundation of China (51375466, 51005218), the Beijing Natural Science Foundation (3132023), the Fundamental Research Funds for the Central Universities (2652012115, 2652013081) and the Tribology Science Fund of State Key Laboratory of Tribology (SKLTKF13B10) to this research.

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Authors and Affiliations

  1. School of Engineering and Technology, China University of Geosciences (Beijing), No. 29, Xueyuan Road, Haidian District, Beijing, 100083, People’s Republic of China

    Zhimin Liu, Wen Yue, Song Wang, Zhiqiang Fu & Chengbiao Wang

  2. Mechanical Engineering Department, Tsinghua University, Beijing, 100084, People’s Republic of China

    Jiajun Liu

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  1. Zhimin Liu
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  2. Wen Yue
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  3. Song Wang
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  4. Zhiqiang Fu
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  5. Chengbiao Wang
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  6. Jiajun Liu
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Correspondence to Wen Yue.

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Liu, Z., Yue, W., Wang, S. et al. Preparation and Characterization of Sulfurized Tungsten Doped Non-hydrogenated Diamond-Like Carbon Films. Plasma Chem Plasma Process 35, 769–783 (2015). https://doi.org/10.1007/s11090-015-9614-0

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  • DOI: https://doi.org/10.1007/s11090-015-9614-0

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