Abstract
In this paper, we show and analyse the results of morphological characterisations of Dy2O3 layer deposited on an n-type GaAs substrate using atomic force microscopy (AFM). For structural measurement, the surface morphology of the elaborated layer was revealed as a nano-conical event. The global experimental ellipsometric results Ψ and Δ versus emission wavelength of the Dy2O3/n-GaAs structure have been presented and discussed. Using these results and a Matlab code in which we assumed the structure had three layers, we have calculated several linear and nonlinear optical constants of the Dy2O3 thin layer. Dysprosium oxide has high optical conductivity and a noticeable increase in nonlinear optical parameters, making it a promising candidate for various applications. This is especially true in the field of optoelectronics.
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Adachi, G.Y., Imanaka, N.: The binary rare earth oxides. Chem. Rev. 98, 1479–1514 (1998). https://doi.org/10.1021/cr940055h
Alkhalifah, M.S., Ouerghui, W.: DFT calculations of optoelectronic properties of cubic (In1-xAlx)2O3 alloys. J. Comput. Electron. 20, 1234–1247 (2021). https://doi.org/10.1007/s10825-021-01669-9
Al-Kuhaili, M.F., Durrani, S.M.A.: Structural and optical properties of dysprosium oxide thin films. J. Alloys Compd. 591, 234–239 (2014). https://doi.org/10.1016/j.jallcom.2013.12.226
Aly, K.A., Abdel-Rahim, F.M.: Effect of Sn addition on the optical constants of Ge–Sb–S thin films based only on their measured reflectance spectra. J. Alloys Compd. 561, 284–290 (2013). https://doi.org/10.1016/j.jallcom.2013.01.197
Atyia, H.E., Hegab, N.A.: Optical spectroscopy and dispersion parameters of Ge15Se60X25 (X = As or Sn) amorphous thin films. EPJ Appl. Phys. 63, 1–7 (2013). https://doi.org/10.1051/epjap/2013130099
Ben Abdallah, H., Ouerghui, W.: Hybrid functional calculations of electro-optical properties of novel Ga1−xInxTe ternary chalcogenides. Appl. Phys. A Mater. Sci. Process. 126, 1–12 (2020). https://doi.org/10.1007/s00339-020-03581-8
Ben Abdallah, H., Ouerghui, W.: Spin–orbit coupling effect on electronic, linear and nonlinear optical properties of Bi2S3 and the ternary bismuth sulfide Bi2S2.75Se0.25: Ab-initio calculations. Opt. Quantum Electron. 54, 1–18 (2022). https://doi.org/10.1007/s11082-021-03411-y
Benali, A., Hachama, M., Bounif, A., Nechnech, A., Karray, M.: A TLBO-optimized artificial neural network for modeling axial capacity of pile foundations. Eng. Comput. 37, 675–684 (2021). https://doi.org/10.1007/s00366-019-00847-5
Chakraverty, M., Kittur, H.M., Arun Kumar, P.: First principle simulations of various magnetic tunnel junctions for applications in magnetoresistive random access memories. IEEE Trans. Nanotechnol. 12, 971–977 (2013). https://doi.org/10.1109/TNANO.2013.2274902
Chang, C.Y., Juan, T.P.C., Lee, J.Y.M.: Fabrication and characterization of metal-ferroelectric (Pb Zr0.53 Ti0.47 O3) -insulator (Dy2O3) -semiconductor capacitors for nonvolatile memory applications. Appl. Phys. Lett. 88, 18–21 (2006). https://doi.org/10.1063/1.2177549
Chongsawangvirod, S., Irene, E.A., Kalnitsky, A., Tay, S.P., Ellul, J.P.: Refractive index profiles of thermally grown and chemically vapor deposited films on silicon. Proc.: Electrochem. Soc. 90, 320–331 (1990). https://doi.org/10.1149/1.2086263
Depas, M., Van Meirhaeghe, R.L., Laflere, W.H., Cardon, F.: A quantitative analysis of capacitance peaks in the impedance of Al/SiOx/p-Si tunnel diodes. Semicond. Sci. Technol. 7, 1476–1483 (1992). https://doi.org/10.1088/0268-1242/7/12/009
El Radaf, I.M., AlKhalifah, M.S., El-Bana, M.S.: Highlights on the structural, optical, and optoelectrical properties of novel InSbO3 thin films synthesized by chemical bath deposition. J. Non Cryst. Solids 588, 121612 (2022). https://doi.org/10.1016/j.jnoncrysol.2022.121612
Fouad, S.S., El Radaf, I.M., Sharma, P., El-Bana, M.S.: Multifunctional CZTS thin films: structural, optoelectrical, electrical and photovoltaic properties. J. Alloys Compd. 757, 124–133 (2018). https://doi.org/10.1016/j.jallcom.2018.05.033
Garoudja, E., Amrani, R., Filali, W., Lekoui, F., Oussalah, S., Cuminal, Y., Abboud, P., Henini, M.: Artificial bee colony algorithm: a novel strategy for optical constants and thin film thickness extraction using only optical transmittance spectra for photovoltaic applications. Optik 241, 167030 (2021). https://doi.org/10.1016/j.ijleo.2021.167030
Goswami, A., Varma, R.R.: Dielectric behaviour of dysprosium oxide films. Thin Solid Films 28, 157–165 (1975). https://doi.org/10.1016/0040-6090(75)90106-6
Hsiao, I.H., Chung, C.Y.: AI-infused Semantic model to enrich and expand programming question generation. J. Artif. Intell. Technol. 2, 47–54 (2022). https://doi.org/10.37965/jait.2022.0090
Hussein, G.A.M., Korban, H., Goda, B., Miyaji, K.: Physicochemical characterization of the formation course of dysprosium oxide from hydrated dysprosium nitrate; thermoanalytical and microscopic studies. Colloids Surfaces A Physicochem. Eng. Asp. 125, 63–71 (1997). https://doi.org/10.1016/S0927-7757(97)00013-7
Kalnitsky, A., Tay, S.P., Ellul, J.P., Chongsawangvirod, S., Andrews, J.W., Irene, E.A.: Measurements and modeling of thin silicon dioxide films on silicon. J. Electrochem. Soc. 137, 234–238 (1990). https://doi.org/10.1149/1.2086373
Khardani, M., Bouaïcha, M., Bessaïs, B.: Bruggeman effective medium approach for modelling optical properties of porous silicon: comparison with experiment. Phys. Status Solidi Curr Top. Solid State Phys. 4, 1986–1990 (2007). https://doi.org/10.1002/pssc.200674420
Lawniczak-Jablonska, K., Babushkina, N.V., Dynowska, E., Malyshev, S.A., Romanova, L.I., Zhygulin, D.V., Laiho, T.: Surface morphology of DyxOy films grown on Si. Appl. Surf. Sci. 253, 639–645 (2006). https://doi.org/10.1016/j.apsusc.2005.12.150
Liu, Y., Qiu, J., Liu, L.: Applicability of the effective medium approximation in the ellipsometry of randomly micro-rough solid surfaces. Opt. Express 26, 16560 (2018). https://doi.org/10.1364/oe.26.016560
Lou, C.Y., Somorjai, G.A.: Studies of the vaporization mechanism of gallium arsenide single crystals. J. Chem. Phys. 55, 4554–4565 (1971). https://doi.org/10.1063/1.1676789
Makuła, P., Pacia, M., Macyk, W.: How to correctly determine the band gap energy of modified semiconductor photocatalysts based on UV–Vis spectra. J. Phys. Chem. Lett. 9, 6814–6817 (2018). https://doi.org/10.1021/acs.jpclett.8b02892
Medenbach, O., Dettmar, D., Shannon, R.D., Fischer, R.X., Yen, W.M.: Refractive index and optical dispersion of rare earth oxides using a small-prism technique. J. Opt. A Pure Appl. Opt. 3, 174–177 (2001). https://doi.org/10.1088/1464-4258/3/3/303
Mhamdi, A., Mimouni, R., Amlouk, A., Amlouk, M., Belgacem, S.: Study of copper doping effects on structural, optical and electrical properties of sprayed ZnO thin films. J. Alloys Compd. 610, 250–257 (2014). https://doi.org/10.1016/j.jallcom.2014.04.007
Msalmi, R., Elleuch, S., Hamdi, B., Zouari, R., Naїli, H.: Synthesis, DFT calculations, intermolecular interactions and third order nonlinear optical properties of new organoammonium tetrabromocadmate (II): (C5H6N2Cl)2[CdBr4]·H2O. J. Mol. Struct. 1222, 128853 (2020). https://doi.org/10.1016/j.molstruc.2020.128853
Ouerghui, W., Alkhalifah, M.S.: Density functional investigation of structural, electronic, optical and thermodynamic properties of Zn1−xBexO semiconductor. Appl. Phys. A Mater. Sci. Process. 125, 1–12 (2019). https://doi.org/10.1007/s00339-019-2664-z
Ouerghui, W., Alkhalifah, M.S., Ben Abdallah, H.: DFT calculations on ZnO1−x compounds for optoelectronic applications. J. Comput. Electron. (2021). https://doi.org/10.1007/s10825-020-01645-9
Ouerghui, W., Gassoumi, M., Beji, L., Maaref, M.A.: Physica E: low-dimensional systems and nanostructures optical properties of quaternary GaMnAsP thin layer grown by molecular beam epitaxy. Phys. E Low-Dimens. Syst. Nanostruct. 131, 114733 (2021b). https://doi.org/10.1016/j.physe.2021.114733
Päiväsaari, J., Putkonen, M., Sajavaara, T., Niinistö, L.: Atomic layer deposition of rare earth oxides: erbium oxide thin films from β-diketonate and ozone precursors. J. Alloys Compd. 374, 124–128 (2004). https://doi.org/10.1016/j.jallcom.2003.11.149
Pan, T.M., Lu, C.H.: Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature. Appl. Phys. Lett. 99, 2009–2012 (2011). https://doi.org/10.1063/1.3638490
Pan, T.M., Chang, W.T., Chiu, F.C.: Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics. Appl. Surf. Sci. 257, 3964–3968 (2011). https://doi.org/10.1016/j.apsusc.2010.11.144
Panda, A.B., Glaspell, G., Samy El-Shall, M.: Microwave synthesis and optical properties of uniform nanorods and nanoplates of rare earth oxides. J. Phys. Chem. C 111, 1861–1864 (2007). https://doi.org/10.1021/jp0670283
Prasad, C.V., Reddy, M.S.P., Rajagopal Reddy, V., Park, C.: Effect of annealing on chemical, structural and electrical properties of Au/Gd2O3/n-GaN heterostructure with a high-k rare-earth oxide interlayer. Appl. Surf. Sci. 427, 670–677 (2018). https://doi.org/10.1016/j.apsusc.2017.09.016
Rahman, M.S., Evangelou, E.K., Androulidakis, I., Dimoulas, A., Mavrou, G., Tsipas, P.: Investigation of voltage dependent relaxation, charge trapping, and stress induced leakage current effects in HfO2/Dy2O3 gate stacks grown on Ge (100) substrates. J. Vac. Sci. Technol. B Microelectron. Nanom. Struct. 27, 439 (2009). https://doi.org/10.1116/1.3025912
Rajkumar, R., Praveen Kumar, P.: Structure, crystal growth and characterization of piperazinium bis(4-nitrobenzoate) dihydrate crystal for nonlinear optics and optical limiting applications. J. Mol. Struct. 1179, 108–117 (2019). https://doi.org/10.1016/j.molstruc.2018.10.085
Redinger, A., Siebentritt, S.: Loss Mechanisms in kesterite solar cells. Copp. Zinc Tin Sulfide-Based Thin-Film Sol. Cells. 627, 363–386 (2015). https://doi.org/10.1002/9781118437865.ch16
Robertson, J. : 1065073.Pdf, 303 (2002) 94–100.
Rouseel, P.J., Vanhellemont, J., Maes, H.E.: Numerical aspects of the implementation of effective-medium approximation models in spectroscopic ellipsometry regression software. Thin Solid Films 234, 423–427 (1993). https://doi.org/10.1016/0040-6090(93)90299-5
Saeed, A.: Studies on dielectric properties, opto-electrical parameters and electronic polarizability of thermally evaporated amorphous Cd50S50–xSex thin films. J. Alloys Compd. 671, 566–578 (2016). https://doi.org/10.1016/j.jallcom.2016.02.126
Seddik, T., Behera, D., Batouche, M., Ouerghui, W., Abdallah, H.B., Sarkar, R.K., Salah, M.M., Shaker, A., Mukherjee, S.K.: Electronic properties, linear and nonlinear performance of KAgCh (Ch = S, Se) compounds: a first-principles study. Crystals 13, 726 (2023). https://doi.org/10.3390/cryst13050726
Sha, W., Guo, Y., Yuan, Q., Tang, S., Zhang, X., Lu, S., Guo, X., Cao, Y.-C., Cheng, S.: Artificial intelligence to power the future of materials science and engineering. Adv. Intell. Syst. 2, 1900143 (2020). https://doi.org/10.1002/aisy.201900143
Sharma, P., Dahshan, A., Aly, K.A.: New quaternary Ge–Se–Sb–Ag optical materials: blue shift in absorption edge and evaluation of optical parameters. J. Alloys Compd. 616, 323–327 (2014). https://doi.org/10.1016/j.jallcom.2014.07.123
Si, R., Zhang, Y.W., You, L.P., Yan, C.H.: Rare-earth oxide nanopolyhedra, nanoplates, and nanodisks. Angew. Chemie: Int. Ed. 44, 3256–3260 (2005). https://doi.org/10.1002/anie.200462573
Soliman, T.S., Vshivkov, S.A., Elkalashy, S.I.: Structural, linear and nonlinear optical properties of Ni nanoparticles: polyvinyl alcohol nanocomposite films for optoelectronic applications. Opt. Mater. (amst) 107, 110037 (2020). https://doi.org/10.1016/j.optmat.2020.110037
Sreethawong, T., Chavadej, S., Ngamsinlapasathian, S., Yoshikawa, S.: A simple route utilizing surfactant-assisted templating sol–gel process for synthesis of mesoporous Dy2O3 nanocrystal. J. Colloid Interface Sci. 300, 219–224 (2006). https://doi.org/10.1016/j.jcis.2006.03.060
Sujana, M.G., Chattopadyay, K.K., Anand, S.: Characterization and optical properties of nano-ceria synthesized by surfactant-mediated precipitation technique in mixed solvent system. Appl. Surf. Sci. 254, 7405–7409 (2008). https://doi.org/10.1016/j.apsusc.2008.05.341
Szatkowski, J., Sierański, K.: Simple interface-layer model for the nonideal characteristics of the Schottky-barrier diode. Solid State Electron. 35, 1013–1015 (1992). https://doi.org/10.1016/0038-1101(92)90333-8
Vettumperumal, R., Jemima, J.R., Kalyanaraman, S., Thangavel, R.: Analysis of electronic and optical properties of copper iodide (γ-CuI) by TB—mBJ method: A promising optoelectronic material. Vacuum 162, 156–162 (2019). https://doi.org/10.1016/j.vacuum.2019.01.047
Wang, J., Ji, T., Zhu, Y., Fang, Z., Ren, W.: Band gap and structure characterization of Tm2O3 films. J. Rare Earths 30, 233–235 (2012). https://doi.org/10.1016/S1002-0721(12)60029-5
Wu, Z., Zhang, J., Benfield, R.E., Ding, Y., Grandjean, D., Zhang, Z., Ju, X.: Structure and chemical transformation in cerium oxide nanoparticles coated by surfactant cetyltrimethylammonium bromide (CTAB): an X-ray absorption spectroscopic study. J. Phys. Chem. B 106(18), 4569–4577 (2002)
Xu, A.W., Fang, Y.P., You, L.P., Liu, H.Q.: A simple method to synthesize Dy(OH)3 and Dy2O3 nanotubes. J. Am. Chem. Soc. 125, 1494–1495 (2003). https://doi.org/10.1021/ja029181q
Xu, K., Ranjith, R., Laha, A., Parala, H., Milanov, A.P., Fischer, R.A., Bugiel, E., Feydt, J., Irsen, S., Toader, T., Bock, C., Rogalla, D., Osten, H.J., Kunze, U., Devi, A.: Atomic layer deposition of Gd2O3 and Dy2O3: a study of the ALD characteristics and structural and electrical properties. Chem. Mater. 24, 651–658 (2012). https://doi.org/10.1021/cm2020862
Yahia, I.S., Rammah, Y.S., Alfaify, S., Yakuphanoglu, F.: Optical characterization of nano-pentacene thin films. Superlattices Microstruct. 64, 58–69 (2013). https://doi.org/10.1016/j.spmi.2013.08.022
Yoriume, Y.: Method for numerical inversion of the ellipsometry equation for transparent films. J. Opt. Soc. Am. 73, 888–891 (1983). https://doi.org/10.1364/JOSA.73.000888
Yu, H.Y., Chang, S.Z., Aoulaiche, M., Wang, X.P., Adelmann, C., Kazer, B., Absil, P., Lauwers, A., Biesemans, S.: Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: the role of bulk dielectrics charge. Appl. Phys. Lett. 93, 1–4 (2008). https://doi.org/10.1063/1.3058695
Yu, M., Liu, P., Zhou, W., Liu, J., Li, S.: Preparation and characterization of Fe3O4/T-ZnOw composites. Chin. J. Aeronaut. 25, 485–488 (2012). https://doi.org/10.1016/S1000-9361(11)60409-3
Yu, J.H., Chestakov, D.A., Eggink, H.J.: In-situ analysis of thermal properties of polymer composites by embedded LED temperature sensor. Microelectron. J. 44, 1025–1028 (2013). https://doi.org/10.1016/j.mejo.2013.01.010
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Ouerghui, W., Saghrouni, H. & Beji, L. Atomic force microscopy and ellipsometry investigations of rare earth oxide Dy2O3 nano-layer processed by electron beam evaporation on n-GaAs substrate. Opt Quant Electron 56, 354 (2024). https://doi.org/10.1007/s11082-023-05866-7
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DOI: https://doi.org/10.1007/s11082-023-05866-7