Abstract
The deposition and effect of reduced Graphene Oxide (rGO) on the optoelectronic properties of Porous Silicon (PS) were investigated. The electrochemical etching (ECE) method was used to prepare the PS sample. By method drop casting technique, a reduced Graphene Oxide (rGO) was deposited in the form of a thin coating on the PS surface and is partially incorporated within PS pores. Atomic Force Microscopy (AFM), X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) were used to describe the structural, morphological and roughness characteristics. The Photosensitivity investigations reveal that responsivity is higher for the rGO/PS sample. The resultant’s rGO/PS, showed the best stability of the photocurrent, indicating that rGO deposition can improve the stability of porous silicon optoelectrical characteristics.
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Zamel, R.S., Hussien, A.M.A. Study the optoelectronic properties of reduced graphene oxide doped on the porous silicon for photodetector. Opt Quant Electron 55, 1023 (2023). https://doi.org/10.1007/s11082-023-05399-z
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DOI: https://doi.org/10.1007/s11082-023-05399-z