Abstract
This work objects to prepare of tin oxide (SnO2)-silicon carbide (SiC) doped- polyvinyl alcohol (PVA) as future nanomaterials to utilize in the nanoelectronics and optics devices. The structural, optical and dielectric characteristics of PVA/SnO2/SiC films were investigated. The results indicated to the absorption (A) rise about 90.7% at UV-region (λ = 300 nm) and transmittance decreases about 41.3%, this behavior can be useful in optical, anti-reflectance and electronic nano-devices. The energy gap of PVA reduced from 5 to 2 eV with rise in the SnO2/SiC ratio to (6 wt%) which make the PVA/SnO2/SiC films appropriate in several nano-electronics and nano-optics fields. The other optical parameters for PVA enhanced with an increase in the SnO2/SiC ratio. Results of the dielectric properties showed the dielectric constant (ε') and electrical conductivity (σAC) improved about 62.3% and 76.2% when content of SnO2/SiC reached (6 wt%) at (f = 100 Hz) which is welcomed in potential and energy storage applications. Finally, the attained results showed the PVA/SnO2/SiC films can be considered as a promising nano-materials to employ in various nano-electronics and optics applications with exceptional optical and electrical properties compared of other nanosystems.
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Hashim, A., Hadi, A. & Abbas, M.H. Fabrication and unraveling the morphological, optical and electrical features of PVA/SnO2/SiC nanosystem for optics and nanoelectronics applications. Opt Quant Electron 55, 642 (2023). https://doi.org/10.1007/s11082-023-04929-z
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DOI: https://doi.org/10.1007/s11082-023-04929-z