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Numerical simulation of bilayer perovskite quantum dot solar cell with 18.55% efficiency

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Abstract

Three structures of lead halide perovskite quantum dot (QD) solar cells with different absorbing layers of CsPbI3, FAPbI3, and CsPbI3/ FAPbI3 were simulated by SCAPS (Abdelaziz et al. in Opt Mater 10:10973, 2020; Karthick et al. in Sol Energy205:349–357, 2020; Verschraegen and Burgelman in Thin Solid Films 515:6276–6279, 2007). First, a device with a CsPbI3 QD absorber with a bandgap of 1.76 eV was simulated and power conversion efficiency (PCE) of 11.92% was obtained. Then, a device with a different absorber, the FAPbI3 QD layer with a band gap of 1.62 eV was simulated and we observed that the PCE was reduced to 9.50%. The narrower bandgap perovskite (FAPbI3) leads to an increase in the short circuit current density from 13.22 mA/cm2 to 14.87 mA/cm2. Finally, the bilayer of the CsPbI3/FAPbI3 structure was used as absorbing layers and a PCE of 18.55% was obtained. This increase in power conversion efficiency could be attributed to more efficient charge extraction. The physical mechanisms occurring in the devices were discussed in detail.

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Acknowledgements

The authors would like to acknowledge the University of Maragheh for their support and contribution to this study.

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Authors and Affiliations

  1. Department of Physics, Faculty of Basic Science, University of Maragheh, P.O. Box55181-83111, Maragheh, Iran

    Masood Mehrabian & Elham Norouzi Afshar

  2. Department of Physics, Faculty of Sciences, Urmia University, Urmia, Iran

    Pourya Norouzzadeh

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  1. Masood Mehrabian
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  2. Elham Norouzi Afshar
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Mehrabian, M., Norouzi Afshar, E. & Norouzzadeh, P. Numerical simulation of bilayer perovskite quantum dot solar cell with 18.55% efficiency. Opt Quant Electron 54, 439 (2022). https://doi.org/10.1007/s11082-022-03823-4

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