Abstract
Optical power dependence of capacitance in uni-traveling-carrier photodetectors is analyzed by founding a differential capacitance model. The trend of capacitance variation against optical power by simulation gets a good agreement with the measured results. The relationship between light-intensity-dependent capacitance and DC saturation characteristics of the device is also investigated at different collection layer thicknesses. The optical power at the maximum point of capacitance is near that at the DC saturation point. With the thickness of collection layer increasing, the maximum capacitance decreases and optical power at capacitance maximum point also becomes small.
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Acknowledgements
This work was supported by the Joint Laboratory of Quantum Optoelectronics and the Theory of Bivergentum and Beijing International Scientific and Technological Cooperation Base of Information Optoelectronics and Nano-heterogeneous Structure. This work was funded by National Nature and Science Foundation of China (NSFC) (61574019, 61674018, and 61674020) and Fund of State Key Laboratory of Information Photonics and Optical Communications and the Specialized Research Fund for the Doctoral Program of Higher Education of China (20130005130001).
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Ma, X.K., Huang, Y.Q., Yang, Y.W. et al. Optical power dependence of capacitance in uni-traveling-carrier photodetectors. Opt Quant Electron 51, 44 (2019). https://doi.org/10.1007/s11082-019-1751-x
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DOI: https://doi.org/10.1007/s11082-019-1751-x