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Optoelectronics properties of TiO2:Cu thin films obtained by sol gel method

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Abstract

In this research, Cu-doped TiO2 thin films have been successfully deposited onto a glass substrate by Sol–gel technique using dip coating method. The films were annealed at different annealing temperatures (400–500 °C) for 1 h. The structural, optical and electrical properties of the films were investigated and compared using X-ray Diffraction, UV–visible spectrophotometer and 4-point probe method. Optical analysis by mean transmittance T(λ) and absorption A(λ) measurements in the wavelength range between 300 to 800 nm allow us to determine the indirect band gap energy. DRX analysis of our thin films of TiO2:Cu shows that the intensities of the line characteristic of anatase phase increasing in function of the temperature.

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Acknowledgements

This work has been partially supported by LGOPS Laboratory University Polytechnic University of Valencia, Spain and LMOPS Laboratory University of Lorraine France. Technical support from LMOPS and LGOPS labs is gratefully acknowledged.

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Authors and Affiliations

  1. FSTM Hassan II Casablanca University, Mohammedia, Morocco

    Zineb Essalhi & Bouchaib Hartiti

  2. FSTBM Sultan Moulay Sliman University, Beni Mellal, Morocco

    Abderrazak Lfakir

  3. University Politecnica, Valencia, Spain

    Bernabé Mari

  4. University of Lorraine, Metz, France

    Philippe Thevenin

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  1. Zineb Essalhi
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  2. Bouchaib Hartiti
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  3. Abderrazak Lfakir
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  4. Bernabé Mari
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  5. Philippe Thevenin
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Correspondence to Zineb Essalhi.

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Essalhi, Z., Hartiti, B., Lfakir, A. et al. Optoelectronics properties of TiO2:Cu thin films obtained by sol gel method. Opt Quant Electron 49, 301 (2017). https://doi.org/10.1007/s11082-017-1142-0

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