Abstract
InP quantum dots (QDs) were grown on catalyst-free Si substrates by MOCVD to study the behavior of growth of low dimensional III–V structures on Si substrates. It is found that at temperature 575 °C, uniform QDs with diameter 20–50 nm and height 6–8 nm were obtained, whereas at 600 °C, InP nanoislands with wetting layers were formed instead of QDs. From the photoluminescence measurements, blue shift of the band gap is observed with a value of 1.395 eV. The densities of the QDs were found to be 7–8 × 1013 m−2. X-ray photoelectron spectroscopy establishes the presence of InP rather than indium droplet. X-ray diffraction spectra show different surface planes of the QDs. The effect of growth temperature has been discussed.
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Acknowledgments
One of the authors (N. N. Halder) acknowledges financial help from the MEP Project (Department of Science and Technology, New Delhi). The authors are thankful to Mr. P. Chakraborty for his technical help in the growth, Ms. S. Roy (Chemical Engineering, IIT, Kharagpur) for AFM, and Dr. T. Shripathi (UGC-DAE CSR, Indore) for XPS measurements.
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Halder, N.N., Kundu, S., Mukherjee, R. et al. Catalyst-free direct growth of InP quantum dots on Si by MOCVD: a step toward monolithic integration. J Nanopart Res 14, 1279 (2012). https://doi.org/10.1007/s11051-012-1279-5
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DOI: https://doi.org/10.1007/s11051-012-1279-5