Abstract
A positive tone resist for UV and X-ray lithography synthesized starting from an organically modified silicon alkoxide, bis(triethoxysilyl)benzene, through the sol–gel method, either in basic or in acid catalysis, is presented. Being directly photo-processable, the sol–gel system combines the opportunity to avoid the use of a sacrificial layer in the fabrication process, with the possibility to fit electro-optical and structural properties of the final device material to specific requirements. In addition, the positive tone behaviour allows to preserve the organic functionality of the system after irradiation. A study of the optical and structural modifications induced on the resist by irradiation has been carried out by FT-IR spectroscopy, UV–vis spectroscopy and spectroscopic ellipsometry. An interpretation of the mechanisms leading to exposed cross-linked film development is given. Experiments have demonstrated the possibility of obtaining structures on films with lateral dimensions spanning from the micron scale up to less than a hundred nm, opening the way to a possible exploitation of such positive tone functional system in the field of miniaturized sensors.
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Acknowledgments
The authors gratefully acknowledge support from the University of Padova through the PLATFORMS strategic project “PLAsmonic nano-Textured materials and architectures FOR enhanced Molecular Sensing”-prot. STPD089KSC.
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Brigo, L., Grenci, G., Carpentiero, A. et al. Positive resist for UV and X-ray lithography synthesized through sol–gel chemistry. J Sol-Gel Sci Technol 60, 400–407 (2011). https://doi.org/10.1007/s10971-011-2512-x
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DOI: https://doi.org/10.1007/s10971-011-2512-x