Abstract
Sb2-xCoxTe3 (x = 0, 0.05, 0.3) nanostructures have been synthesized using microwave-assisted solvothermal synthesis technique. The x = 0 and x = 0.05 samples show a semiconducting-like resistivity with an upturn in the low temperature (T < 20 K) region and a gradual drop at the high temperature region. A metal-like resistivity at high temperature along with an upturn at low temperature is observed as the concentration of cobalt is increased to x = 0.3. Resistivity upturn of the samples is evaluated as the competition between electron-electron interaction (EEI) effect and quantum interference effect (QIE). Magnetoresistance (MR) of the x = 0 and x = 0.05 samples at the very low magnetic field and at low temperatures show disorder-induced weak localization (WL) which disappears at high temperature, whereas x = 0.3 sample shows only weak anti-localization (WAL). The high-field MR of x = 0 and 0.3 samples exhibits power law dependency at 2 K. High-field MR reveals the existence of the surface state as well as bulk state conduction in the materials. Thermoelectric power measurement of the nanostructures exhibits positive Seebeck coefficients denoting p-type carriers which vary quasi linearly with temperature and decrease with the incorporation of cobalt in the systems. An enhancement in power factor of 47% is observed near room temperature when the concentration of cobalt is increased from x = 0 to x = 0.3.
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Acknowledgements
The authors would like to thank Dr. M. Gupta and Layant Behera for XRD measurements, Mr. M. P. Saravanan for supplying liquid He and N2 for measurements, DST, India for their initial support for 14 T PPMS.
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Bera, S., Behera, P., Mishra, A. et al. Survival of Topological Surface States in Cobalt Doped Sb2Te3. J Supercond Nov Magn 33, 1645–1651 (2020). https://doi.org/10.1007/s10948-019-05358-4
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DOI: https://doi.org/10.1007/s10948-019-05358-4