Abstract
In this paper, we have calculated the spin wave gap and the angular dependence of magnetization reversal in a single-layer thin magnetic film that includes the strong perpendicular magnetic anisotropy and in-plane anisotropy. The film is assumed to be under the influence of the out-of-plane direction of the applied magnetic field at zero temperature. Using the quantum model, it is shown that the calculated equations present a nonzero spin wave gap at zero magnetic field which is strongly affected by anisotropies. The effects of the in-plane anisotropy and the role of the applied field were examined. We also discussed a simple theoretical model for the angular variation of switching field by using a quasi-classical argument. We used some constants in connection with experimental data which are reported for chromium telluride thin films grown by molecular beam epitaxy.
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Acknowledgements
The authors thank Tanmoy Pramanik, from The University of Texas, for the experimental data of Cr2Te3.
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Kaplan, B., Kaplan, R. The Spin Wave Gap and Switching Field in Thin Films with In-Plane Anisotropy. J Supercond Nov Magn 31, 1779–1783 (2018). https://doi.org/10.1007/s10948-017-4395-8
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DOI: https://doi.org/10.1007/s10948-017-4395-8