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Ferromagnetism of Mn5Ge3 Precipitates in Mn-implanted Self-organized Ge/Si Quantum Dots

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Abstract

One layer of self-assembled Ge quantum dots with Si barrier were grown on high resistivity (100) p-type Si substrates by rapid thermal chemical vapor deposition followed by Mn ion implantation and post-annealing. A presence of ferromagnetic structure was confirmed in the dilute magnetic quantum dots (DMQD). The DMQD through 10 min annealing was found to be homogeneous, and to exhibit p-type conductivity, insulating property, and ferromagnetic ordering with a Curie temperature, T c=170 K. On the other hand, the DMQD through 30 and 60 min annealing was found to be semi-insulating and ferromagnetic ordering with a Curie temperature over 300 K. The XRD data show that there is a phase separation of Mn rich phases Mn5Ge3 from MnGe nanostructure. Therefore, it is likely that the ferromagnetic exchange coupling of sample with T c=170 K is hole-mediated and the ferromagnetism in sample with T c>300 K is due to Mn5Ge3 phase.

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  1. Quantum Functional Semiconductor Research Center, Dongguk University, Seoul, 100-715, Korea

    I. T. Yoon

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Yoon, I.T. Ferromagnetism of Mn5Ge3 Precipitates in Mn-implanted Self-organized Ge/Si Quantum Dots. J Supercond Nov Magn 23, 319–323 (2010). https://doi.org/10.1007/s10948-009-0532-3

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  • DOI: https://doi.org/10.1007/s10948-009-0532-3

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