Abstract
Based on a quantum-mechanical model with a non-Hermitian Hamiltonian, we theoretically describe the tunneling current in a heterostructure containing a quantum well. We pay special attention to the effect of inelastic electron scattering by optical phonons in the tunneling process. We demonstrate that, in the case of a heterostructure of the composition In0.53Ga0.47As/AlAs/InP, the dependences of the tunneling current on the applied electric field reveals a peak associated with the resonant tunneling and a smaller postresonant peak induced by the LO-phonon-assisted tunneling.
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Shchurova, L.Y., Murzin, V.N. Phonon-Assisted Tunneling Current in a Double-Barrier Heterostructure with a Quantum Well. J Russ Laser Res 42, 632–642 (2021). https://doi.org/10.1007/s10946-021-10002-5
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DOI: https://doi.org/10.1007/s10946-021-10002-5