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Characterization of Diamond: Like Carbon Films Synthesized by DC-Plasma Enhanced Chemical Vapor Deposition

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Abstract

In this paper, diamond-like carbons were produced on tungsten and aluminum substrates by DC plasma enhanced chemical vapor deposition (DC-PECVD) system in a C2H2/H2 gas mixture using C2H2 as source hydrocarbon and H2 as etching and diluting gas. The operation pressure during the growth and substrates temperature were 15 Torr and 180°C, respectively. Characterization of the DLCs deposited on tungsten and aluminum substrates were carried out by Fourier transform infrared (FTIR) spectroscopy, scanning electron microscopy (SEM), Raman spectroscopy and Atomic force microscopy (AFM). AFM analysis displayed that the DLCs grown on W substrate has lower roughness than the DLCs deposited on Al substrate and it was smoother. FTIR analysis indicates the existence of C–H vibration mode in the DLCs grown on both of substrates. The Raman spectroscopy shows G peak position and I(D)/I (G) ratio decreased for the DLCs grown on W substrate. The SEM images show diffuse and dense distribution of DLCs in Al and W substrate, respectively. These results shows that the optimum conditions were obtained on W substrate.

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Acknowledgments

The authors would like to acknowledge from Iran National Science Foundation (INSF) for supporting this project.

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Authors and Affiliations

  1. Department of Physics, Karaj Branch, Islamic Azad University, Karaj, Iran

    Elnaz Vaghri & Majid Borghei

  2. Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, P.O.Box:14665/678, Tehran, Iran

    Zahra Khalaj & Mahmood Ghoranneviss

Authors
  1. Elnaz Vaghri
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  2. Zahra Khalaj
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  3. Mahmood Ghoranneviss
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  4. Majid Borghei
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Correspondence to Mahmood Ghoranneviss.

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Vaghri, E., Khalaj, Z., Ghoranneviss, M. et al. Characterization of Diamond: Like Carbon Films Synthesized by DC-Plasma Enhanced Chemical Vapor Deposition. J Fusion Energ 30, 447–452 (2011). https://doi.org/10.1007/s10894-011-9406-3

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  • DOI: https://doi.org/10.1007/s10894-011-9406-3

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