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Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement

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Journal of Engineering Physics and Thermophysics Aims and scope

Results are presented of an experimental investigation of the temperature sensitivity of an individual base-to-collector junction of a bipolar transistor structure and of this same structure in the case of series connection of blocking emitter and collector junctions. It is shown that the temperature-sensitivity coefficient of the transistor structure operating in a bipolar mode of measurement is an order of magnitude larger than an analogous coefficient of the base-to-collector junction.

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Authors and Affiliations

  1. Physicotechnical Institute of the Science and Production Association “Solar Physics”, Academy of Sciences of the Republic of Uzbekistan, 2b Bodomzor Iuli Str., Tashkent, 100084, Uzbekistan

    A. V. Karimov, D. P. Dzhuraev, Sh. M. Kuliev & A. A. Turaev

Authors
  1. A. V. Karimov
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  2. D. P. Dzhuraev
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  3. Sh. M. Kuliev
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  4. A. A. Turaev
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Correspondence to A. V. Karimov.

Additional information

Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 89, No. 2, pp. 497–500, March–April, 2016.

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Karimov, A.V., Dzhuraev, D.P., Kuliev, S.M. et al. Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement. J Eng Phys Thermophy 89, 514–517 (2016). https://doi.org/10.1007/s10891-016-1404-x

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  • DOI: https://doi.org/10.1007/s10891-016-1404-x

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