Abstract
Atomically thin MoS2 layers have emerged as promising semiconductor photocatalytic materials candidate due to their unique thickness-induced physical properties. In this work, we report on the growth of MoS2 layers on sapphire substrates using a gas-phase chemical vapor deposition (CVD) approach. By tuning the CVD growth parameters, MoS2 monolayers with isolated triangular grains and continuous monolayer samples were obtained. We demonstrate that the MoS2 samples with triangular grains exhibit better photocatalytic degradation efficiency ∼ 95.39% for MB dye solution compared with continuous monolayer MoS2 samples (93.58%). Our findings suggest that the presence of active edge sites in the isolated triangular grains plays a vital role in controlling optical and chemical activity.
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Data will be provided on reasonable request from the corresponding author (SKE).
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Acknowledgements
The authors sincerely thank SRMIST for the financial support through Seed Grant and Startup Grant for the establishment of MicroRaman facility. The authors thank Nanotechnology Research Center (NRC) for providing characterization facilities.
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The authors gratefully acknowledge Science and Engineering Research Board (SERB), Department of Science and Technology (DST), India for the financial support under the research Grants Nos: ECR/2016/000918 and CRG/2021/002938.
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ASS, SH, MN, and SKE have conceived and designed the research work. ASS, VM, and NBS have contributed to the implementation the idea. All the authors have contributed to data analysis and writing of the manuscript.
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Sindhu, A.S., Shinde, N.B., Murugan, V. et al. Role of active edge sites of atomically thin CVD-grown MoS2 layers on the enhanced visible-light photocatalytic activity. J Mater Sci: Mater Electron 35, 27 (2024). https://doi.org/10.1007/s10854-023-11742-7
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DOI: https://doi.org/10.1007/s10854-023-11742-7