Abstract
The deposition of a Ta2O5 thin film (TF) onto n-Si substrates was carried out using a conventional electron beam evaporation method. The amorphous structural nature of the Ta2O5 TF was confirmed through XRD analysis, and a growth of approximately 100 nm was observed through cross-sectional FESEM analysis. Electrical analysis of the Ta2O5 TF device was conducted at room temperature, revealing a good detectivity (D*) of 3.189 × 1012 Jones, a low noise equivalent power (NEP) value of 1.5 × 10−12 W, and responsivity of 0.5 A/W. Additionally, the device exhibited a fast-switching response at − 2 V, with fall and rise times of 46 ms and 53 ms, respectively. These findings suggest that the Ta2O5 TF device holds significant promise for photodetector applications.
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Acknowledgements
This work was supported by the Deanship of Scientific Research at King Faisal University, Saudi Arabia [Project No: GRANT5121]. The authors sincerely thank NIT Durgapur for the FESEM image and NIT Nagaland for financial support.
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ERS, MWA, and BS conducted the initial literature review, while ERS and NKS undertook the fabrication and result analysis. Subsequently, the manuscript was prepared by ERS and NKS, with all authors participating in reviewing and approving the concluding manuscript.
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Singh, E.R., Alam, M.W., Souayeh, B. et al. Fast-response ultraviolet photodetector based on Ta2O5 thin film. J Mater Sci: Mater Electron 34, 2228 (2023). https://doi.org/10.1007/s10854-023-11668-0
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DOI: https://doi.org/10.1007/s10854-023-11668-0