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Self-healing memristors based on SA/PVA/STB hydrogel

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Abstract

Self-healing memristor devices were fabricated in this study using a cost-effective and structurally uncomplicated hydrogel consisting of polyvinylalcohol, sodium alginate, and sodium tetraborate. The device is environmentally friendly, biocompatible, possesses a good switching ratio (~ 50), stable memristor under long time run (> 2000 s), and is able to mimic the learning and forgetting functions. In addition, the device could complete the self-healing process at room temperature to rapidly recover its structure and the memristor function. Therefore, it shows great potential for bioelectronics, data storage, and data encryption.

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Acknowledgements

This work was supported in part by the National Natural Science Foundation of China under Grants 61205095, in part by the Shanghai Young College Teacher Develop funding schemes under Grant slg11006. We gratefully acknowledge Prof. B Cai and Prof. GJ Xu from USST for their help in this work.

Funding

This work was supported in part by the National Natural Science Foundation of China under Grant No. 61205095, in part by the Shanghai Young College Teacher Develop funding schemes under Grant slg11006.

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Authors and Affiliations

  1. Shanghai Key Lab of Modern Optical System, Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, 516 Jungong Rd, Shanghai, 200093, China

    Fenjing Wang, Kejian Chen, Xuran Yi, Yang Shen, Yanni Lin & Zheqi Zhou

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  1. Fenjing Wang
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Contributions

Conceptualization, FW, KC; methodology, FW, XY, KC; investigation, FW, YS, YL, ZZ; experimental studies, FW, data curation, FW; writing—original draft preparation, FW; writing—review and editing, XY. YS, YL, ZZ; visualization, FW; supervision, KC; all authors have read and agreed to the published version of the manuscript.

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Correspondence to Kejian Chen.

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Wang, F., Chen, K., Yi, X. et al. Self-healing memristors based on SA/PVA/STB hydrogel. J Mater Sci: Mater Electron 34, 1520 (2023). https://doi.org/10.1007/s10854-023-10942-5

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