Abstract
Monoclinic-oriented gallium oxide (β-Ga2O3) has diverse applications in optoelectronic devices due to its wide bandgap and stable thermal properties. Moreover, nanostructured β-Ga2O3 exhibits high sensitivity in gas detection because oxygen vacancies in β-Ga2O3 transfer electrons with absorbed gas molecules, such as O2, CO, and CH4. However, gas sensors based on gallium oxide nanomaterials still face significant challenges in realizing high sensitivity and working at room temperature. This paper reported the growth of nanostructured β-Ga2O3 on sapphire substrates using chemical vapor deposition with gold as catalyst. Stoichiometry radio in β-Ga2O3 showed the absence of oxygen according to the energy dispersive spectrum result, which is consistent with the photoluminescence analysis. The excitation wavelength was 261.0 nm. Photoluminescence spectrum showed broad emission with a 467.1 nm wavelength peak associated with oxygen vacancies. The sensors were coated with β-Ga2O3 nanostructures on the interdigitated electrodes, making them sensitive to oxygen at room temperature and responsive to light. The sensing mechanism revealed the photogenerated electrons and holes transferred between oxygen vacancies in β-Ga2O3 and adsorbed gas.
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This study was financially supported by the Postgraduate Education and Teaching Reform Project of Dalian Maritime University (No. YJG2022608).
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All authors contributed to the study conception and design. Conceptualization, methodology, software, investigation, formal Analysis, writing—original draft were performed by AG. The conceptualization, funding acquisition, resources, supervision, writing—review & editing was written by YC. The data curation, visualization, investigation were performed by FZ. The resources were supported by TY, HY, LC, JC and XZ. Additionally, all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.
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Gou, A., Cheng, Y., Zhu, F. et al. Study on oxygen vacancies in gallium oxide nanostructures. J Mater Sci: Mater Electron 34, 1052 (2023). https://doi.org/10.1007/s10854-023-10462-2
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DOI: https://doi.org/10.1007/s10854-023-10462-2