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On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs)

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Abstract

Due to their high dielectric strength, high resistivity, and extended range of band gap, diamond-like carbon films have great potential in the semiconductor device applications. In this study, Cu-doped diamond-like carbon (DLC) film deposited on Si substrate by electrodeposition technique to obtain Au/Cu-DLC/p-Si Schottky diodes (SDs). X-ray photoelectron spectroscopy was used to investigate the chemical compositions of the film. The (capacitance/conductance)–voltage–frequency (C–V–f, G–V–f) features of this structure were investigated between 1 kHz and 3 MHz. The basic electronic parameters of the SDs such as diffusion potential (VD), Fermi energy (EF) level, barrier height (ΦB), and depletion layer (WD) thickness were calculated from the reverse-bias C−2–V curves depending on frequency. The values of VD, ΦB, and series resistance were changed from 0.372 V, 0.665 eV, and 243.5 Ω at 10 kHz to 0.603 V, 0.896 eV, and 35.9 Ω at 3 MHz, respectively. The voltage and frequency-dependent spectra of interface states and their life time were also obtained by both the parallel conductance and high–low-frequency capacitance methods, respectively. The obtained results confirm the potential usage of DLC film in electronic device, and fabricated device shows excellent dielectric properties.

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Data availability

The datasets analyzed during the current study are available from the corresponding author on reasonable request.

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Funding

The authors declare that no funds, grants, or other support were received during the preparation of this manuscript.

Author information

Authors and Affiliations

  1. Vocational School of Health Services, Gazi University, Ankara, Turkey

    H. G. Cetinkaya

  2. Department of Nanotechnology Engineering, Zonguldak Bulent Ecevit University, Zonguldak, Turkey

    A. Feizollahi Vahid

  3. Department of Avionics, Faculty of Aeronautics and Astronautics, İskenderun Technical University, Hatay, Turkey

    N. Basman

  4. Sabuncuoğlu Şerefeddin Vocational School of Health Services, Amasya University, Amasya, Turkey

    S. Demirezen

  5. Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey

    Y. Şafak Asar & S. Altındal

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Contributions

All authors contributed to the study conception and design. Material preparation, data collection, and analysis were performed by HGC, AFV, NB, SD, YŞA, and ŞA. The first draft of the manuscript was written by HGC and all authors commented on previous versions of the manuscript. All authors read and approved the final manuscript.

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Correspondence to H. G. Cetinkaya.

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Cetinkaya, H.G., Feizollahi Vahid, A., Basman, N. et al. On the wide range frequency and voltage dependence of electrical features and density of surface states of the Al/(Cu:DLC)/p-Si/Au Schottky diodes (SDs). J Mater Sci: Mater Electron 34, 822 (2023). https://doi.org/10.1007/s10854-023-10247-7

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