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A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures

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Abstract

We report on the measured effects of temperature on the DC and RF transconductance for several important HEMT technologies. Six different HEMT transistors were evaluated. Single- and double-heterojunction HEMTs, GaAs and GaN materials, virgin and multi-layer pHEMTs, and matched and pseudomorphic HEMTs are analyzed to enable a comparative and quantitative analysis for various transistor types. The temperature effects on the HEMT behavior vary remarkably with the considered transistor technology and working conditions. As a matter of fact, by changing the transistor and bias point, a higher temperature can yield an increase or decrease in the transconductance. It is worth noting that GaAs transistors have a bias point where the DC and RF transconductances are nearly invariant with temperature, owing to two opposing temperature effects canceling each other out, while no such bias condition was found for the GaN-based transistors.

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Authors and Affiliations

  1. Department of Electrical and Electronic Engineering, University of Chittagong, Chittagong, 4331, Bangladesh

    Mohammad Abdul Alim

  2. Department of Electrical Engineering, University of Sharjah, Sharjah, 27272, UAE

    Anwar Jarndal

  3. Institute of Electronic, Microelectronic and Nanotechnology (IEMN), The University of Lille, 59000, Lille, France

    Christophe Gaquiere

  4. Department of Biomedical and Dental Sciences and Morphofunctional Imaging, University of Messina, 98125, Messina, Italy

    Giovanni Crupi

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  1. Mohammad Abdul Alim
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Contributions

MAA and GC contributed to conceptualization and methodology. MAA and AJ contributed to validation and investigation. MAA, AJ, and GC contributed to writing—original draft preparation. CG and GC contributed to writing—review and editing and supervision. All authors have read and agreed to the published version of the manuscript.

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Correspondence to Mohammad Abdul Alim.

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Alim, M.A., Jarndal, A., Gaquiere, C. et al. A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures. J Mater Sci: Mater Electron 34, 892 (2023). https://doi.org/10.1007/s10854-023-10176-5

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