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Enhanced dielectric properties and thermal stability of epoxy induced by polyhedral oligomeric silsesquioxanes

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Abstract

With the development of industrial technology, the power module has to suffer from high temperature, high voltage, and high frequency. Meanwhile the effect of temperature and space charge on dielectric properties is becoming more and more serious. The traditional epoxy cannot meet the requirements of high temperature and high insulation. In this work, polyhedral oligomeric silsesquioxanes (POSS) are introduced to epoxy to prepare composites with various filling ratios. The characterization results indicate that there is good compatibility in the POSS/epoxy system. When the filling content is 2.5%, the composite possesses the largest dipole relaxation activation energy value of 0.45 eV and has the lowest dielectric constant as well as dielectric loss. The trap energy and density of the composites are tested and calculated. Among the pure and composite samples, the deepest traps are introduced in the composites with 1% POSS. The composites have the similar tendency for the properties of DC breakdown strength, DC conductivity, and space charge dynamics. A trap-regulated space charge behavior model is proposed to analyze the above properties. Significantly, the thermal stability and the glass transition temperature (Tg) are enhanced with the filling ratio, the char yield increases from 6.19 to 16.17%, and the Tg increases from 180 to 222 °C. Thus, a new kind of composite that has excellent dielectric properties and temperature stability is fabricated, which opens a novel window for the electronic packaging materials.

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Data availability

The datasets generated during the current study are available from the corresponding author on reasonable request.

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Funding

This research was funded by the Natural Science Foundation of Heilongjiang Province of China (ZD2020E009), China Postdoctoral Science Foundation (No. 2020T130156), Heilongjiang Postdoctoral Financial Assistance (No. LBH-Z18098), Fundamental Research Foundation for Universities of Heilongjiang Province (No. 2019-KYYWF-0207 and 2018-KYYWF-1624), and University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province (UNPYSCT-2020177).

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Authors and Affiliations

  1. Key Laboratory of Engineering Dielectrics and Its Application, Ministry of Education, Harbin University of Science and Technology, Harbin, 150080, People’s Republic of China

    Chunbiao Wang, Yu Feng, Changhai Zhang, Tiandong Zhang, Qingguo Chi, Qingguo Chen & Qingquan Lei

  2. School of Electrical and Electronic Engineering, Harbin University of Science and Technology, Harbin, 150080, People’s Republic of China

    Chunbiao Wang, Yu Feng, Changhai Zhang, Tiandong Zhang, Qingguo Chi, Qingguo Chen & Qingquan Lei

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  1. Chunbiao Wang
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  2. Yu Feng
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  5. Qingguo Chi
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Contributions

All authors contributed to the study conception and design. Material preparation, data collection, and analysis were performed by [Yu Feng, Changhai Zhang, Tiandong Zhang, Qingguo Chen, and Qingquan Lei]. The first draft of the manuscript was written by [Chunbiao Wang and Qingguo Chi]. All authors read and approved the final manuscript.

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Correspondence to Yu Feng or Qingguo Chi.

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Wang, C., Feng, Y., Zhang, C. et al. Enhanced dielectric properties and thermal stability of epoxy induced by polyhedral oligomeric silsesquioxanes. J Mater Sci: Mater Electron 34, 23 (2023). https://doi.org/10.1007/s10854-022-09450-9

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