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Precursor-dependent resistive switching properties of nanostructured g-C3N4: statistical and experimental investigations

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Abstract

Recently, 2D layered materials like graphitic carbon nitride (g-C3N4) are gaining significant attention due to their excellent structural and electronic properties. We report the synthesis of g-C3N4 by polycondensation method using different precursors such as urea (U), thiourea (T), melamine (M), and combined precursors (UTM) for resistive switching (RS). Among all devices, UTM precursor-based g-C3N4 switching layer shows good RS characteristics. The distribution of switching voltages of all devices was studied using the Weibull distribution technique. Moreover, switching voltages were modelled and predicted using the statistical time series analysis method. For this, Holt’s Winter Exponential Smoothing technique was utilized. All fabricated devices demonstrated the asymmetric RS effect and double-valued charge flux characteristics, suggesting the presence of a non-ideal memristor effect. The optimized UTM device shows good endurance and retention memory performance. The charge transport results reveal that Ohmic and Child’s square law dominated the conduction of the device. Based on electrical and charge transport results, a plausible filamentary RS effect is presented. This study suggested that the UTM is beneficial for getting excellent structural, morphological and RS properties from g-C3N4 2D nanomaterial.

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The datasets used and/or analysed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

SLP would like to thank Chhatrapati Shahu Maharaj Research, Traning and Human Development Institute (SARTHI), Pune for providing the financial support under Chhatrapati Shahu Maharaj National Research Fellowship (CSMNRF-2021). RSR is thankful to the Department of Science and Technology for providing INSPIRE fellowship (DST/INSPIRE Fellowship/2019/IF190812), New Delhi. NLT is thankful to DST-SERB for providing financial assistance through the Teachers Associateship for Research Excellence (TARE) scheme (TAR/2021/000307). The financial assistance through DST-PURSE Phase-II (2018–2023) and UGC DSA-Phase II (2018–2023) is highly acknowledged.

Funding

Funding was provided by Chhatrapati Shahu Maharaj Research, Traning and Human Development Institute (SARTHI), Pune under Chhatrapati Shahu Maharaj National Research Fellowship (CSMNRF-2021), Department of Science and Technology under INSPIRE fellowship (DST/INSPIRE Fellowship/2019/IF190812), New Delhi, DST-SERB through the Teachers Associateship for Research Excellence (TARE) scheme (TAR/2021/000307) and DST-PURSE Phase-II (2018–2023) and UGC DSA-Phase II (2018–2023).

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Authors and Affiliations

  1. Smart Materials Research Laboratory, Department of Physics, Shivaji University, Kolhapur, M.S., 416004, India

    S. L. Patil, R. S. Redekar, O. Y. Pawar & N. L. Tarwal

  2. Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, M.S., 416004, India

    S. L. Patil, O. Y. Pawar, S. S. Kundale & T. D. Dongale

  3. Yashwantrao Chavan School of Rural Development, Shivaji University, Kolhapur, M.S., 416004, India

    S. S. Sutar

  4. Department of Chemistry, Shivaji University, Kolhapur, M.S., 416004, India

    K. V. More

  5. Department of Electrical Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, Korea

    V. D. Chavan & Deok-kee Kim

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Contributions

All authors contributed to the study conception and design. Material preparation, data collection, and analysis were completed by SLP. The first draft of the manuscript was written by SLP, and the experimental tests were carried out by RSR, OYP, SSK, SSS, KVM, VDC, DKK and TDD. The manuscript was revised by SLP, RSR, TDD, and NLT. All authors have commented on previous manuscript versions. All authors read and approved the revised manuscript.

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Patil, S.L., Redekar, R.S., Pawar, O.Y. et al. Precursor-dependent resistive switching properties of nanostructured g-C3N4: statistical and experimental investigations. J Mater Sci: Mater Electron 34, 155 (2023). https://doi.org/10.1007/s10854-022-09436-7

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